Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...

Ausführliche Beschreibung

Bibliographische Detailangaben
Hauptverfasser: Yu Zeng, Zhan Shen, Xu Wu, Dong-Xiao Wang, Ye-Liang Wang, Ya-Li Sun, Li Wu, Yi Zhang
Format: Artikel
Sprache:English
Veröffentlicht: Elsevier 2021-05-01
Schriftenreihe:Journal of Materiomics
Schlagworte:
Online Zugang:http://www.sciencedirect.com/science/article/pii/S2352847820305165