Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy: Yu Zeng, Zhan Shen, Xu Wu, Dong-Xiao Wang, Ye-Liang Wang, Ya-Li Sun, Li Wu, Yi Zhang
Format: Artykuł
Język:English
Wydane: Elsevier 2021-05-01
Seria:Journal of Materiomics
Hasła przedmiotowe:
Transition metal dichalcogenides
Optoelectronic device
VSe2
CZTSSe solar cell
Back interface
Dostęp online:http://www.sciencedirect.com/science/article/pii/S2352847820305165

Internet

http://www.sciencedirect.com/science/article/pii/S2352847820305165

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