Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics
It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)...
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| Format: | Article |
| Language: | English |
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Joint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP)
2019-11-01
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| Series: | Journal of Applied Sciences and Environmental Management |
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| Online Access: | https://www.ajol.info/index.php/jasem/article/view/191394 |
| _version_ | 1797228067878338560 |
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| author | O.N. Nenuwe O.E. Agbalagba |
| author_facet | O.N. Nenuwe O.E. Agbalagba |
| author_sort | O.N. Nenuwe |
| collection | DOAJ |
| description |
It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)/GaAs(100) and GaAs/InAs interfaces using the reverse non-equilibrium molecular dynamics (RNEMD) technique. Data obtained showed that, at GaAs(110)/GaAs(100) the TIC increased from 0.912 x 10-9 (W/K) to 1.433 x 10-9 (W/K), the TIR decreased from 1.096 x 109 (K/W) to 0.697 x 109 (K/W) between 300 K and 1000 K, and the thermal grain conductivity increased from 7.47 (W/mK) to 15.52 (W/mK) and 7.48 (W/mK) to 80.71 (W/mK) between 15 Å and 55 Å at 300 K. At GaAs/InAs interface the TIC increased from 7.228 x -10 (W/K) to 14.498 x 10-10 (W/K) and the TIR decreased from 0.138 x 1010 (K/W) to 0.068 x 1010 (K/W) between 300 K and 700 K, respectively. It was observed that, as temperature is increased the TIC and TIR for both materials change significantly. This trend is consistent with previous molecular dynamic studies of interface materials.
Keywords: Interface conductance, thermal resistance, grain conductivity, temperature.
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| first_indexed | 2024-04-24T14:50:49Z |
| format | Article |
| id | doaj.art-ed8d88937af4467bbf7110f0cdc74267 |
| institution | Directory Open Access Journal |
| issn | 2659-1502 2659-1499 |
| language | English |
| last_indexed | 2024-04-24T14:50:49Z |
| publishDate | 2019-11-01 |
| publisher | Joint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP) |
| record_format | Article |
| series | Journal of Applied Sciences and Environmental Management |
| spelling | doaj.art-ed8d88937af4467bbf7110f0cdc742672024-04-02T19:50:02ZengJoint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP)Journal of Applied Sciences and Environmental Management2659-15022659-14992019-11-01231010.4314/jasem.v23i10.21Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular DynamicsO.N. NenuweO.E. Agbalagba It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)/GaAs(100) and GaAs/InAs interfaces using the reverse non-equilibrium molecular dynamics (RNEMD) technique. Data obtained showed that, at GaAs(110)/GaAs(100) the TIC increased from 0.912 x 10-9 (W/K) to 1.433 x 10-9 (W/K), the TIR decreased from 1.096 x 109 (K/W) to 0.697 x 109 (K/W) between 300 K and 1000 K, and the thermal grain conductivity increased from 7.47 (W/mK) to 15.52 (W/mK) and 7.48 (W/mK) to 80.71 (W/mK) between 15 Å and 55 Å at 300 K. At GaAs/InAs interface the TIC increased from 7.228 x -10 (W/K) to 14.498 x 10-10 (W/K) and the TIR decreased from 0.138 x 1010 (K/W) to 0.068 x 1010 (K/W) between 300 K and 700 K, respectively. It was observed that, as temperature is increased the TIC and TIR for both materials change significantly. This trend is consistent with previous molecular dynamic studies of interface materials. Keywords: Interface conductance, thermal resistance, grain conductivity, temperature. https://www.ajol.info/index.php/jasem/article/view/191394Interface conductancethermal resistancegrain conductivitytemperature. |
| spellingShingle | O.N. Nenuwe O.E. Agbalagba Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics Journal of Applied Sciences and Environmental Management Interface conductance thermal resistance grain conductivity temperature. |
| title | Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics |
| title_full | Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics |
| title_fullStr | Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics |
| title_full_unstemmed | Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics |
| title_short | Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics |
| title_sort | thermal transport properties in gaas 110 gaas 100 and gaas inas interfaces by reverse non equilibrium molecular dynamics |
| topic | Interface conductance thermal resistance grain conductivity temperature. |
| url | https://www.ajol.info/index.php/jasem/article/view/191394 |
| work_keys_str_mv | AT onnenuwe thermaltransportpropertiesingaas110gaas100andgaasinasinterfacesbyreversenonequilibriummoleculardynamics AT oeagbalagba thermaltransportpropertiesingaas110gaas100andgaasinasinterfacesbyreversenonequilibriummoleculardynamics |