Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces
Bulk NdNiO3 and thin films grown along the pseudocubic (001)pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)pc NdGaO3, the MIT occurs at T = 335 K and the Néel transition at T = 230 K....
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4919803 |
| _version_ | 1818517870759378944 |
|---|---|
| author | S. Catalano M. Gibert V. Bisogni F. He R. Sutarto M. Viret P. Zubko R. Scherwitzl G. A. Sawatzky T. Schmitt J.-M. Triscone |
| author_facet | S. Catalano M. Gibert V. Bisogni F. He R. Sutarto M. Viret P. Zubko R. Scherwitzl G. A. Sawatzky T. Schmitt J.-M. Triscone |
| author_sort | S. Catalano |
| collection | DOAJ |
| description | Bulk NdNiO3 and thin films grown along the pseudocubic (001)pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)pc NdGaO3, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates. |
| first_indexed | 2024-12-11T01:02:06Z |
| format | Article |
| id | doaj.art-ed983eada8884ec3a7564efc3df8c186 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-11T01:02:06Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-ed983eada8884ec3a7564efc3df8c1862022-12-22T01:26:18ZengAIP Publishing LLCAPL Materials2166-532X2015-06-0136062506062506-710.1063/1.4919803015592APMTailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfacesS. Catalano0M. Gibert1V. Bisogni2F. He3R. Sutarto4M. Viret5P. Zubko6R. Scherwitzl7G. A. Sawatzky8T. Schmitt9J.-M. Triscone10Department of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandSwiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, SwitzerlandCanadian Light Source, Saskatoon, Saskatchewan S7N 2V3, CanadaCanadian Light Source, Saskatoon, Saskatchewan S7N 2V3, CanadaDepartment of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandDepartment of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z1, CanadaSwiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, SwitzerlandDepartment of Quantum Matter Physics, University of Geneva, CH-1211 Geneva, SwitzerlandBulk NdNiO3 and thin films grown along the pseudocubic (001)pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)pc NdGaO3, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.http://dx.doi.org/10.1063/1.4919803 |
| spellingShingle | S. Catalano M. Gibert V. Bisogni F. He R. Sutarto M. Viret P. Zubko R. Scherwitzl G. A. Sawatzky T. Schmitt J.-M. Triscone Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces APL Materials |
| title | Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces |
| title_full | Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces |
| title_fullStr | Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces |
| title_full_unstemmed | Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces |
| title_short | Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces |
| title_sort | tailoring the electronic transitions of ndnio3 films through 111 pc oriented interfaces |
| url | http://dx.doi.org/10.1063/1.4919803 |
| work_keys_str_mv | AT scatalano tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT mgibert tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT vbisogni tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT fhe tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT rsutarto tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT mviret tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT pzubko tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT rscherwitzl tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT gasawatzky tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT tschmitt tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces AT jmtriscone tailoringtheelectronictransitionsofndnio3filmsthrough111pcorientedinterfaces |