Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the...
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MDPI AG
2021-08-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/17/4976 |
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| author | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Mikhail E. Levinshtein |
| author_facet | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Mikhail E. Levinshtein |
| author_sort | Alexander A. Lebedev |
| collection | DOAJ |
| description | The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices. |
| first_indexed | 2024-03-10T08:08:20Z |
| format | Article |
| id | doaj.art-ede05b7373ea4d82a17f53290b718924 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:08:20Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-ede05b7373ea4d82a17f53290b7189242023-11-22T10:54:27ZengMDPI AGMaterials1996-19442021-08-011417497610.3390/ma14174976Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton IrradiationAlexander A. Lebedev0Vitali V. Kozlovski1Klavdia S. Davydovskaya2Mikhail E. Levinshtein3Solid State Electronic Department, Ioffe Institute, Politekhnicheskaya Street 26, 194021 St. Petersburg, RussiaDepartment of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, 195251 St. Petersburg, RussiaSolid State Electronic Department, Ioffe Institute, Politekhnicheskaya Street 26, 194021 St. Petersburg, RussiaSolid State Electronic Department, Ioffe Institute, Politekhnicheskaya Street 26, 194021 St. Petersburg, RussiaThe radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.https://www.mdpi.com/1996-1944/14/17/4976silicon carbideradiation hardnessproton and electron irradiationcharge removal ratecompensationirradiation temperature |
| spellingShingle | Alexander A. Lebedev Vitali V. Kozlovski Klavdia S. Davydovskaya Mikhail E. Levinshtein Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation Materials silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature |
| title | Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation |
| title_full | Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation |
| title_fullStr | Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation |
| title_full_unstemmed | Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation |
| title_short | Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation |
| title_sort | radiation hardness of silicon carbide upon high temperature electron and proton irradiation |
| topic | silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature |
| url | https://www.mdpi.com/1996-1944/14/17/4976 |
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