A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires

Abstract Copper nanowires (CuNWs)-based thin film is one of the potential alternatives to tin-doped indium oxide (ITO) in terms of transparent conductive films (TCFs). However, the severe problem of atmospheric oxidation restricts their practical applications. In this work, we develop a simple appro...

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Main Authors: Ya-Ting Lin, Da-Wei Huang, Pin-Feng Huang, Li-Chun Chang, Yi-Ting Lai, Nyan-Hwa Tai
Format: Article
Language:English
Published: SpringerOpen 2022-08-01
Series:Nanoscale Research Letters
Online Access:https://doi.org/10.1186/s11671-022-03716-1
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author Ya-Ting Lin
Da-Wei Huang
Pin-Feng Huang
Li-Chun Chang
Yi-Ting Lai
Nyan-Hwa Tai
author_facet Ya-Ting Lin
Da-Wei Huang
Pin-Feng Huang
Li-Chun Chang
Yi-Ting Lai
Nyan-Hwa Tai
author_sort Ya-Ting Lin
collection DOAJ
description Abstract Copper nanowires (CuNWs)-based thin film is one of the potential alternatives to tin-doped indium oxide (ITO) in terms of transparent conductive films (TCFs). However, the severe problem of atmospheric oxidation restricts their practical applications. In this work, we develop a simple approach to fabricate highly stable TCFs through the dip-coating method using reduced graphene oxide (rGO) and CuNWs as the primary materials. Compared with previous works using toxic reduction agents, herein, the CuNWs are synthesized via a green aqueous process using glucose and lactic acid as the reductants, and rGO is prepared through the modified Hummers’ method followed by a hydrogen-annealing process to form hydrogen-annealing-reduced graphene oxide (h-rGO). In the rGO/CuNWs films, the dip-coated graphene oxide layer can increase the adhesion of the CuNWs on the substrate, and the fabricated h-rGO/CuNWs can exhibit high atmospheric oxidation resistance and excellent flexibility. The sheet resistance of the h-rGO/CuNWs film only increased from 25.1 to 42.2 Ω/sq after exposure to ambient atmosphere for 30 days and remained almost unchanged after the dynamic bending test for 2500 cycles at a constant radius of 5.3 mm. The h-rGO/CuNWs TCF can be not only fabricated via a route with a superior inexpensive and safe method but also possessed competitive optoelectronic properties with high electrical stability and flexibility, demonstrating great opportunities for future optoelectronic applications.
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spelling doaj.art-edf388eb76be4e7f95c0cc8b3cbee0672023-08-02T04:45:43ZengSpringerOpenNanoscale Research Letters1556-276X2022-08-0117111110.1186/s11671-022-03716-1A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper NanowiresYa-Ting Lin0Da-Wei Huang1Pin-Feng Huang2Li-Chun Chang3Yi-Ting Lai4Nyan-Hwa Tai5Department of Materials Science and Engineering, National Tsing Hua UniversityDepartment of Materials Engineering, Ming Chi University of TechnologyDepartment of Materials Engineering, Ming Chi University of TechnologyDepartment of Materials Engineering, Ming Chi University of TechnologyDepartment of Materials Engineering, Ming Chi University of TechnologyDepartment of Materials Science and Engineering, National Tsing Hua UniversityAbstract Copper nanowires (CuNWs)-based thin film is one of the potential alternatives to tin-doped indium oxide (ITO) in terms of transparent conductive films (TCFs). However, the severe problem of atmospheric oxidation restricts their practical applications. In this work, we develop a simple approach to fabricate highly stable TCFs through the dip-coating method using reduced graphene oxide (rGO) and CuNWs as the primary materials. Compared with previous works using toxic reduction agents, herein, the CuNWs are synthesized via a green aqueous process using glucose and lactic acid as the reductants, and rGO is prepared through the modified Hummers’ method followed by a hydrogen-annealing process to form hydrogen-annealing-reduced graphene oxide (h-rGO). In the rGO/CuNWs films, the dip-coated graphene oxide layer can increase the adhesion of the CuNWs on the substrate, and the fabricated h-rGO/CuNWs can exhibit high atmospheric oxidation resistance and excellent flexibility. The sheet resistance of the h-rGO/CuNWs film only increased from 25.1 to 42.2 Ω/sq after exposure to ambient atmosphere for 30 days and remained almost unchanged after the dynamic bending test for 2500 cycles at a constant radius of 5.3 mm. The h-rGO/CuNWs TCF can be not only fabricated via a route with a superior inexpensive and safe method but also possessed competitive optoelectronic properties with high electrical stability and flexibility, demonstrating great opportunities for future optoelectronic applications.https://doi.org/10.1186/s11671-022-03716-1
spellingShingle Ya-Ting Lin
Da-Wei Huang
Pin-Feng Huang
Li-Chun Chang
Yi-Ting Lai
Nyan-Hwa Tai
A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
Nanoscale Research Letters
title A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
title_full A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
title_fullStr A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
title_full_unstemmed A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
title_short A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires
title_sort green approach for high oxidation resistance flexible transparent conductive films based on reduced graphene oxide and copper nanowires
url https://doi.org/10.1186/s11671-022-03716-1
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