Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted...
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2020-10-01
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author | Olga Yu. Koval Vladimir V. Fedorov Alexey D. Bolshakov Sergey V. Fedina Fedor M. Kochetkov Vladimir Neplokh Georgiy A. Sapunov Liliia N. Dvoretckaia Demid A. Kirilenko Igor V. Shtrom Regina M. Islamova George E. Cirlin Maria Tchernycheva Alexey Yu. Serov Ivan S. Mukhin |
author_facet | Olga Yu. Koval Vladimir V. Fedorov Alexey D. Bolshakov Sergey V. Fedina Fedor M. Kochetkov Vladimir Neplokh Georgiy A. Sapunov Liliia N. Dvoretckaia Demid A. Kirilenko Igor V. Shtrom Regina M. Islamova George E. Cirlin Maria Tchernycheva Alexey Yu. Serov Ivan S. Mukhin |
author_sort | Olga Yu. Koval |
collection | DOAJ |
description | Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices. |
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language | English |
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spelling | doaj.art-edfd9b65731041f383fb54b6a018740e2023-11-20T18:18:48ZengMDPI AGNanomaterials2079-49912020-10-011011211010.3390/nano10112110Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone MembraneOlga Yu. Koval0Vladimir V. Fedorov1Alexey D. Bolshakov2Sergey V. Fedina3Fedor M. Kochetkov4Vladimir Neplokh5Georgiy A. Sapunov6Liliia N. Dvoretckaia7Demid A. Kirilenko8Igor V. Shtrom9Regina M. Islamova10George E. Cirlin11Maria Tchernycheva12Alexey Yu. Serov13Ivan S. Mukhin14Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaDepartment of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, RussiaInstitute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, RussiaThe Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, RussiaNanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, RussiaCentre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris Sud, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau CEDEX, FranceThe Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, RussiaSchool of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, RussiaControlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.https://www.mdpi.com/2079-4991/10/11/2110flexible optoelectronicsself-catalyzeddilute nitridesGaPNGaPnanowire |
spellingShingle | Olga Yu. Koval Vladimir V. Fedorov Alexey D. Bolshakov Sergey V. Fedina Fedor M. Kochetkov Vladimir Neplokh Georgiy A. Sapunov Liliia N. Dvoretckaia Demid A. Kirilenko Igor V. Shtrom Regina M. Islamova George E. Cirlin Maria Tchernycheva Alexey Yu. Serov Ivan S. Mukhin Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane Nanomaterials flexible optoelectronics self-catalyzed dilute nitrides GaPN GaP nanowire |
title | Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane |
title_full | Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane |
title_fullStr | Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane |
title_full_unstemmed | Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane |
title_short | Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane |
title_sort | structural and optical properties of self catalyzed axially heterostructured gapn gap nanowires embedded into a flexible silicone membrane |
topic | flexible optoelectronics self-catalyzed dilute nitrides GaPN GaP nanowire |
url | https://www.mdpi.com/2079-4991/10/11/2110 |
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