Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr
Recently, as a novel technique, electronic double-layer transistors (EDLTs) with ionic liquids have shown strong potential for tuning the electronic states of correlated systems. EDLT induced local carrier doping can always lead to dramatic changes in physical properties when compared to parent mate...
| Main Authors: | , , , , , |
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| Format: | Article |
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IOP Publishing
2019-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/ab00c1 |
| _version_ | 1797750250944856064 |
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| author | Xinmin Wang Shuai Zhang Huanyan Fu Moran Gao Zhian Ren Genfu Chen |
| author_facet | Xinmin Wang Shuai Zhang Huanyan Fu Moran Gao Zhian Ren Genfu Chen |
| author_sort | Xinmin Wang |
| collection | DOAJ |
| description | Recently, as a novel technique, electronic double-layer transistors (EDLTs) with ionic liquids have shown strong potential for tuning the electronic states of correlated systems. EDLT induced local carrier doping can always lead to dramatic changes in physical properties when compared to parent materials, e.g. insulating-superconducting (SC) transition. Generally, the modification of gate voltage ( V _G ) in EDLT devices produces a direct change on the doping level. Here, we report that the processing temperature ( T _G ) also plays a dominant role in the electric field induced superconductivity in layered ZrNBr single crystals. When applying V _G at ${T}_{{\rm{G}}}\,\geqslant $ 250 K, the induced SC state is irreversible in the material, which is confirmed in the zero resistance and diamagnetism after long-time relaxation at room temperature and/or by applying reverse voltage, whereas the solid/liquid interface induced reversible insulating-SC transition occurs at ${T}_{{\rm{G}}}\,\leqslant $ 235 K. These experimental facts support another electrochemical mechanism that electric field induced partial deintercalation of Br ions could cause permanent electron doping into the system. Our findings in this study will extend the potential of electric fields for tuning bulk electronic states in low-dimension systems. |
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| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:29:57Z |
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| spelling | doaj.art-ee2a73a1d4394b1e8548a841c32bf0e02023-08-08T15:33:36ZengIOP PublishingNew Journal of Physics1367-26302019-01-0121202300210.1088/1367-2630/ab00c1Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBrXinmin Wang0Shuai Zhang1https://orcid.org/0000-0003-1342-7233Huanyan Fu2Moran Gao3Zhian Ren4Genfu Chen5Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; School of Physical Sciences, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of ChinaInstitute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of ChinaInstitute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; School of Physics and Electronics, Shandong Normal University , Jinan 250014, People’s Republic of ChinaInstitute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; School of Physical Sciences, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of ChinaInstitute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; School of Physical Sciences, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; Songshan Lake Materials Laboratory , Dongguan, Guangdong 523808, People’s Republic of ChinaInstitute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; School of Physical Sciences, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; Songshan Lake Materials Laboratory , Dongguan, Guangdong 523808, People’s Republic of ChinaRecently, as a novel technique, electronic double-layer transistors (EDLTs) with ionic liquids have shown strong potential for tuning the electronic states of correlated systems. EDLT induced local carrier doping can always lead to dramatic changes in physical properties when compared to parent materials, e.g. insulating-superconducting (SC) transition. Generally, the modification of gate voltage ( V _G ) in EDLT devices produces a direct change on the doping level. Here, we report that the processing temperature ( T _G ) also plays a dominant role in the electric field induced superconductivity in layered ZrNBr single crystals. When applying V _G at ${T}_{{\rm{G}}}\,\geqslant $ 250 K, the induced SC state is irreversible in the material, which is confirmed in the zero resistance and diamagnetism after long-time relaxation at room temperature and/or by applying reverse voltage, whereas the solid/liquid interface induced reversible insulating-SC transition occurs at ${T}_{{\rm{G}}}\,\leqslant $ 235 K. These experimental facts support another electrochemical mechanism that electric field induced partial deintercalation of Br ions could cause permanent electron doping into the system. Our findings in this study will extend the potential of electric fields for tuning bulk electronic states in low-dimension systems.https://doi.org/10.1088/1367-2630/ab00c1EDLTelectric fieldsuperconductivitylayered nitridegate voltage |
| spellingShingle | Xinmin Wang Shuai Zhang Huanyan Fu Moran Gao Zhian Ren Genfu Chen Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr New Journal of Physics EDLT electric field superconductivity layered nitride gate voltage |
| title | Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr |
| title_full | Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr |
| title_fullStr | Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr |
| title_full_unstemmed | Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr |
| title_short | Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr |
| title_sort | dominant role of processing temperature in electric field induced superconductivity in layered zrnbr |
| topic | EDLT electric field superconductivity layered nitride gate voltage |
| url | https://doi.org/10.1088/1367-2630/ab00c1 |
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