Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk
This paper presents the results of studying the characteristics of hydrogen sensors based on thin In<sub>2</sub>O<sub>3</sub> films modified with tin and dysprosium with dispersed double Pt/Pd catalysts deposited on the surface. To control the content of Sn and Dy in the film...
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| Format: | Article |
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MDPI AG
2022-12-01
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| Series: | Chemosensors |
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| Online Access: | https://www.mdpi.com/2227-9040/11/1/23 |
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| author | Nadezhda Maksimova Tatyana Malinovskaya Valentina Zhek Nadezhda Sergeychenko Evgenii Chernikov Ivan Lapin Valery Svetlichnyi |
| author_facet | Nadezhda Maksimova Tatyana Malinovskaya Valentina Zhek Nadezhda Sergeychenko Evgenii Chernikov Ivan Lapin Valery Svetlichnyi |
| author_sort | Nadezhda Maksimova |
| collection | DOAJ |
| description | This paper presents the results of studying the characteristics of hydrogen sensors based on thin In<sub>2</sub>O<sub>3</sub> films modified with tin and dysprosium with dispersed double Pt/Pd catalysts deposited on the surface. To control the content of Sn and Dy in the films, an original technology was developed, and ceramic targets were fabricated from powders of the In–Dy–O, Dy–Sn–O, and In–Dy–Sn–O systems synthesized by the sol–gel method. Films of complex composition were obtained by RF magnetron sputtering of the corresponding targets. Structural features of the obtained thin films were studied by Raman spectroscopy. It is shown that various combinations of tin and dysprosium concentrations, as well as the presence of Pt/Pd catalysts on the surface, have a significant effect on the defectiveness of the films and the density of oxygen adsorption centers. As a result, the resistance of sensors in pure air (<i>R</i><sub>0</sub>), the activation energies of the temperature dependences of <i>R</i><sub>0</sub>, the bending of the energy bands at the grain boundaries of the semiconductor, and the responses to the action of hydrogen in the concentration range of 20–25,000 ppm change. A unique feature of Pt/Pd/ In<sub>2</sub>O<sub>3</sub>: Sn (0.5 at%), Dy (4.95 at%) films is their high sensitivity at 20–100 ppm and the absence of signal saturation in the region of high hydrogen concentrations of 5000–25,000 ppm, allowing them to be used to detect H<sub>2</sub> in a wide range of concentrations. |
| first_indexed | 2024-03-09T13:12:05Z |
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| institution | Directory Open Access Journal |
| issn | 2227-9040 |
| language | English |
| last_indexed | 2024-03-09T13:12:05Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemosensors |
| spelling | doaj.art-ee5a5497fe9241b5b6d1d61f3c49a30a2023-11-30T21:41:27ZengMDPI AGChemosensors2227-90402022-12-011112310.3390/chemosensors11010023Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the BulkNadezhda Maksimova0Tatyana Malinovskaya1Valentina Zhek2Nadezhda Sergeychenko3Evgenii Chernikov4Ivan Lapin5Valery Svetlichnyi6Laboratory of Optical Materials and Coatings, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaLaboratory of Optical Materials and Coatings, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaLaboratory of Optical Materials and Coatings, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaLaboratory of Semiconductor devices, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaLaboratory of Metal Oxide Semiconductors, Research and Development Center “Perspective Technologies in Microelectronics”, Tomsk State University, Tomsk 634050, RussiaLaboratory of Advanced Materials and Technology, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaLaboratory of Advanced Materials and Technology, Siberian Physical Technical Institute, Tomsk State University, Tomsk 634050, RussiaThis paper presents the results of studying the characteristics of hydrogen sensors based on thin In<sub>2</sub>O<sub>3</sub> films modified with tin and dysprosium with dispersed double Pt/Pd catalysts deposited on the surface. To control the content of Sn and Dy in the films, an original technology was developed, and ceramic targets were fabricated from powders of the In–Dy–O, Dy–Sn–O, and In–Dy–Sn–O systems synthesized by the sol–gel method. Films of complex composition were obtained by RF magnetron sputtering of the corresponding targets. Structural features of the obtained thin films were studied by Raman spectroscopy. It is shown that various combinations of tin and dysprosium concentrations, as well as the presence of Pt/Pd catalysts on the surface, have a significant effect on the defectiveness of the films and the density of oxygen adsorption centers. As a result, the resistance of sensors in pure air (<i>R</i><sub>0</sub>), the activation energies of the temperature dependences of <i>R</i><sub>0</sub>, the bending of the energy bands at the grain boundaries of the semiconductor, and the responses to the action of hydrogen in the concentration range of 20–25,000 ppm change. A unique feature of Pt/Pd/ In<sub>2</sub>O<sub>3</sub>: Sn (0.5 at%), Dy (4.95 at%) films is their high sensitivity at 20–100 ppm and the absence of signal saturation in the region of high hydrogen concentrations of 5000–25,000 ppm, allowing them to be used to detect H<sub>2</sub> in a wide range of concentrations.https://www.mdpi.com/2227-9040/11/1/23thin filmsindium oxidetindysprosiumchemoresistive gas sensorsRaman spectroscopy |
| spellingShingle | Nadezhda Maksimova Tatyana Malinovskaya Valentina Zhek Nadezhda Sergeychenko Evgenii Chernikov Ivan Lapin Valery Svetlichnyi Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk Chemosensors thin films indium oxide tin dysprosium chemoresistive gas sensors Raman spectroscopy |
| title | Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk |
| title_full | Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk |
| title_fullStr | Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk |
| title_full_unstemmed | Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk |
| title_short | Hydrogen Sensors Based on In<sub>2</sub>O<sub>3</sub> Thin Films with Bimetallic Pt/Pd Catalysts on the Surface and Tin and Dysprosium Impurities in the Bulk |
| title_sort | hydrogen sensors based on in sub 2 sub o sub 3 sub thin films with bimetallic pt pd catalysts on the surface and tin and dysprosium impurities in the bulk |
| topic | thin films indium oxide tin dysprosium chemoresistive gas sensors Raman spectroscopy |
| url | https://www.mdpi.com/2227-9040/11/1/23 |
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