| Summary: | Architectures based on multi-bit magnetic domain walls (DWs) take advantage of the fast speed, high density, nonvolatility, and flexible design of DWs to process and store data bits. However, controlling multi-bit DWs driven by electric current at an ideal position remains a significant challenge for developing integrated spintronic applications with high reliability and low power consumption. We exhibit the possibility of driving fast and stable multi-bit DWs at low current density without an in-plane external magnetic field in Fe-rich GdFeCo magnetic wires. When an in-plane magnetic field is applied in the wire direction, the front edge accelerates, although the rear edge decelerates, and the recorded data are destroyed. Hence, this method is not practical. Here, the DW speed of the multi-bit DWs is 1500 m/s under a low current density of 29 × 1010 (A/m2). A straight DW shape is required to accurately read the bits of information by the tunneling magnetoresistance head in real DW memory devices. Moreover, we demonstrate that the DW position is related to the DW shape after injecting a pulse current into the magnetic wire. A straight DW shape is exhibited for 3 ns pulse duration width, while the DW shape became rounded for 30 and 50 ns pulse duration widths. Our finding provides a practical concept for multiple-bit-per-cell memory and presents a viable platform for DW memory applications.
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