Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing

Abstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substa...

Full description

Bibliographic Details
Main Authors: Zain Ul Abideen, Jun‐Gyu Choi, Jodie A. Yuwono, Alexander Kiy, Priyank Vijaya Kumar, Krishnan Murugappan, Won‐June Lee, Patrick Kluth, David R. Nisbet, Thanh Tran‐Phu, Myung‐Han Yoon, Antonio Tricoli
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Electronic Materials
Subjects:
Online Access:https://doi.org/10.1002/aelm.202200905
_version_ 1797772558471266304
author Zain Ul Abideen
Jun‐Gyu Choi
Jodie A. Yuwono
Alexander Kiy
Priyank Vijaya Kumar
Krishnan Murugappan
Won‐June Lee
Patrick Kluth
David R. Nisbet
Thanh Tran‐Phu
Myung‐Han Yoon
Antonio Tricoli
author_facet Zain Ul Abideen
Jun‐Gyu Choi
Jodie A. Yuwono
Alexander Kiy
Priyank Vijaya Kumar
Krishnan Murugappan
Won‐June Lee
Patrick Kluth
David R. Nisbet
Thanh Tran‐Phu
Myung‐Han Yoon
Antonio Tricoli
author_sort Zain Ul Abideen
collection DOAJ
description Abstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substantially improve the performance of semiconductor sensors. Tunable oxygen vacancies in thick 3D networks of metal oxide nanoparticles are engineered using deep ultraviolet photoactivation. High selectivity and sensitivity are achieved by optimizing the electronic structure and surface activity while preserving the 3D morphology. Cross‐sectional depth analysis reveals oxygen vacancies present at various depths (≈24% at a depth of 1.13 µm), with a uniform distribution throughout the thick films. This results in ≈58% increase in the sensitivity of ZnO to 20‐ppb ethanol at room temperature while ≈51% and 64% decrease in the response and recovery times, respectively. At an operating temperature of 150 °C, oxygen‐vacant nanostructures achieve a lower limit of detection of 2 ppb. Density functional theory analysis shows that inducing oxygen vacancies reduces activation energy for ethanol adsorption and dissociation, leading to improved sensing performance. This scalable approach has the potential for designing low‐power wearable chemical and bio‐sensors and tuning the activity and band structure of porous, thick oxide films for multiple applications.
first_indexed 2024-03-12T21:53:39Z
format Article
id doaj.art-ee8e33cfa93b43bf81cff77e3e14a364
institution Directory Open Access Journal
issn 2199-160X
language English
last_indexed 2024-03-12T21:53:39Z
publishDate 2023-04-01
publisher Wiley-VCH
record_format Article
series Advanced Electronic Materials
spelling doaj.art-ee8e33cfa93b43bf81cff77e3e14a3642023-07-26T01:35:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-04-0194n/an/a10.1002/aelm.202200905Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas SensingZain Ul Abideen0Jun‐Gyu Choi1Jodie A. Yuwono2Alexander Kiy3Priyank Vijaya Kumar4Krishnan Murugappan5Won‐June Lee6Patrick Kluth7David R. Nisbet8Thanh Tran‐Phu9Myung‐Han Yoon10Antonio Tricoli11Nanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaSchool of Chemical Engineering University of New South Wales (UNSW) Sydney 2052 AustraliaDepartment of Materials Physics Research School of Physics Australian National University Canberra ACT 2601 AustraliaSchool of Chemical Engineering University of New South Wales (UNSW) Sydney 2052 AustraliaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaDepartment of Materials Physics Research School of Physics Australian National University Canberra ACT 2601 AustraliaThe Graeme Clark Institute The University of Melbourne Melbourne 3010 AustraliaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaAbstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substantially improve the performance of semiconductor sensors. Tunable oxygen vacancies in thick 3D networks of metal oxide nanoparticles are engineered using deep ultraviolet photoactivation. High selectivity and sensitivity are achieved by optimizing the electronic structure and surface activity while preserving the 3D morphology. Cross‐sectional depth analysis reveals oxygen vacancies present at various depths (≈24% at a depth of 1.13 µm), with a uniform distribution throughout the thick films. This results in ≈58% increase in the sensitivity of ZnO to 20‐ppb ethanol at room temperature while ≈51% and 64% decrease in the response and recovery times, respectively. At an operating temperature of 150 °C, oxygen‐vacant nanostructures achieve a lower limit of detection of 2 ppb. Density functional theory analysis shows that inducing oxygen vacancies reduces activation energy for ethanol adsorption and dissociation, leading to improved sensing performance. This scalable approach has the potential for designing low‐power wearable chemical and bio‐sensors and tuning the activity and band structure of porous, thick oxide films for multiple applications.https://doi.org/10.1002/aelm.202200905deep ultraviolet photoactivationmetal oxidesoxygen vacanciesroom temperature sensingvolatile organic compoundsZnO
spellingShingle Zain Ul Abideen
Jun‐Gyu Choi
Jodie A. Yuwono
Alexander Kiy
Priyank Vijaya Kumar
Krishnan Murugappan
Won‐June Lee
Patrick Kluth
David R. Nisbet
Thanh Tran‐Phu
Myung‐Han Yoon
Antonio Tricoli
Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
Advanced Electronic Materials
deep ultraviolet photoactivation
metal oxides
oxygen vacancies
room temperature sensing
volatile organic compounds
ZnO
title Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
title_full Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
title_fullStr Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
title_full_unstemmed Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
title_short Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
title_sort oxygen vacancies engineering in thick semiconductor films via deep ultraviolet photoactivation for selective and sensitive gas sensing
topic deep ultraviolet photoactivation
metal oxides
oxygen vacancies
room temperature sensing
volatile organic compounds
ZnO
url https://doi.org/10.1002/aelm.202200905
work_keys_str_mv AT zainulabideen oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT jungyuchoi oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT jodieayuwono oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT alexanderkiy oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT priyankvijayakumar oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT krishnanmurugappan oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT wonjunelee oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT patrickkluth oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT davidrnisbet oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT thanhtranphu oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT myunghanyoon oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing
AT antoniotricoli oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing