Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing
Abstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substa...
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Format: | Article |
Language: | English |
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Wiley-VCH
2023-04-01
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Series: | Advanced Electronic Materials |
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Online Access: | https://doi.org/10.1002/aelm.202200905 |
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author | Zain Ul Abideen Jun‐Gyu Choi Jodie A. Yuwono Alexander Kiy Priyank Vijaya Kumar Krishnan Murugappan Won‐June Lee Patrick Kluth David R. Nisbet Thanh Tran‐Phu Myung‐Han Yoon Antonio Tricoli |
author_facet | Zain Ul Abideen Jun‐Gyu Choi Jodie A. Yuwono Alexander Kiy Priyank Vijaya Kumar Krishnan Murugappan Won‐June Lee Patrick Kluth David R. Nisbet Thanh Tran‐Phu Myung‐Han Yoon Antonio Tricoli |
author_sort | Zain Ul Abideen |
collection | DOAJ |
description | Abstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substantially improve the performance of semiconductor sensors. Tunable oxygen vacancies in thick 3D networks of metal oxide nanoparticles are engineered using deep ultraviolet photoactivation. High selectivity and sensitivity are achieved by optimizing the electronic structure and surface activity while preserving the 3D morphology. Cross‐sectional depth analysis reveals oxygen vacancies present at various depths (≈24% at a depth of 1.13 µm), with a uniform distribution throughout the thick films. This results in ≈58% increase in the sensitivity of ZnO to 20‐ppb ethanol at room temperature while ≈51% and 64% decrease in the response and recovery times, respectively. At an operating temperature of 150 °C, oxygen‐vacant nanostructures achieve a lower limit of detection of 2 ppb. Density functional theory analysis shows that inducing oxygen vacancies reduces activation energy for ethanol adsorption and dissociation, leading to improved sensing performance. This scalable approach has the potential for designing low‐power wearable chemical and bio‐sensors and tuning the activity and band structure of porous, thick oxide films for multiple applications. |
first_indexed | 2024-03-12T21:53:39Z |
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id | doaj.art-ee8e33cfa93b43bf81cff77e3e14a364 |
institution | Directory Open Access Journal |
issn | 2199-160X |
language | English |
last_indexed | 2024-03-12T21:53:39Z |
publishDate | 2023-04-01 |
publisher | Wiley-VCH |
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series | Advanced Electronic Materials |
spelling | doaj.art-ee8e33cfa93b43bf81cff77e3e14a3642023-07-26T01:35:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-04-0194n/an/a10.1002/aelm.202200905Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas SensingZain Ul Abideen0Jun‐Gyu Choi1Jodie A. Yuwono2Alexander Kiy3Priyank Vijaya Kumar4Krishnan Murugappan5Won‐June Lee6Patrick Kluth7David R. Nisbet8Thanh Tran‐Phu9Myung‐Han Yoon10Antonio Tricoli11Nanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaSchool of Chemical Engineering University of New South Wales (UNSW) Sydney 2052 AustraliaDepartment of Materials Physics Research School of Physics Australian National University Canberra ACT 2601 AustraliaSchool of Chemical Engineering University of New South Wales (UNSW) Sydney 2052 AustraliaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaDepartment of Materials Physics Research School of Physics Australian National University Canberra ACT 2601 AustraliaThe Graeme Clark Institute The University of Melbourne Melbourne 3010 AustraliaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of KoreaNanotechnology Research Laboratory Research School of Chemistry College of Science Australian National University Canberra ACT 2601 AustraliaAbstract Room‐temperature detection of volatile organic compounds in particle‐per‐billion concentrations is critical for the development of wearable and distributed sensor networks. However, sensitivity and selectivity are limited at low operating temperatures. Here, a strategy is proposed to substantially improve the performance of semiconductor sensors. Tunable oxygen vacancies in thick 3D networks of metal oxide nanoparticles are engineered using deep ultraviolet photoactivation. High selectivity and sensitivity are achieved by optimizing the electronic structure and surface activity while preserving the 3D morphology. Cross‐sectional depth analysis reveals oxygen vacancies present at various depths (≈24% at a depth of 1.13 µm), with a uniform distribution throughout the thick films. This results in ≈58% increase in the sensitivity of ZnO to 20‐ppb ethanol at room temperature while ≈51% and 64% decrease in the response and recovery times, respectively. At an operating temperature of 150 °C, oxygen‐vacant nanostructures achieve a lower limit of detection of 2 ppb. Density functional theory analysis shows that inducing oxygen vacancies reduces activation energy for ethanol adsorption and dissociation, leading to improved sensing performance. This scalable approach has the potential for designing low‐power wearable chemical and bio‐sensors and tuning the activity and band structure of porous, thick oxide films for multiple applications.https://doi.org/10.1002/aelm.202200905deep ultraviolet photoactivationmetal oxidesoxygen vacanciesroom temperature sensingvolatile organic compoundsZnO |
spellingShingle | Zain Ul Abideen Jun‐Gyu Choi Jodie A. Yuwono Alexander Kiy Priyank Vijaya Kumar Krishnan Murugappan Won‐June Lee Patrick Kluth David R. Nisbet Thanh Tran‐Phu Myung‐Han Yoon Antonio Tricoli Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing Advanced Electronic Materials deep ultraviolet photoactivation metal oxides oxygen vacancies room temperature sensing volatile organic compounds ZnO |
title | Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing |
title_full | Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing |
title_fullStr | Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing |
title_full_unstemmed | Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing |
title_short | Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing |
title_sort | oxygen vacancies engineering in thick semiconductor films via deep ultraviolet photoactivation for selective and sensitive gas sensing |
topic | deep ultraviolet photoactivation metal oxides oxygen vacancies room temperature sensing volatile organic compounds ZnO |
url | https://doi.org/10.1002/aelm.202200905 |
work_keys_str_mv | AT zainulabideen oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT jungyuchoi oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT jodieayuwono oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT alexanderkiy oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT priyankvijayakumar oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT krishnanmurugappan oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT wonjunelee oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT patrickkluth oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT davidrnisbet oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT thanhtranphu oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT myunghanyoon oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing AT antoniotricoli oxygenvacanciesengineeringinthicksemiconductorfilmsviadeepultravioletphotoactivationforselectiveandsensitivegassensing |