A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
Degradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8863377/ |
| _version_ | 1818417477505253376 |
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| author | Shuai Li Mingxiang Wang Dongli Zhang Huaisheng Wang Qi Shan |
| author_facet | Shuai Li Mingxiang Wang Dongli Zhang Huaisheng Wang Qi Shan |
| author_sort | Shuai Li |
| collection | DOAJ |
| description | Degradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS and NBIS, which begins with a small positive shift of threshold voltage (V<sub>th</sub>), and is followed by a large negative V<sub>th</sub> shift. There is an intrinsic correlation between the degradations of NBS and NBIS. Quantitatively, both stress gate biases (V<sub>G</sub>) and temperature dependencies of ΔV<sub>th</sub> of the two degradations are found to be the same and the recovery processes are also very similar. A unified model of NBS and NBIS is proposed to consistently explain the degradation behaviors of a-IGZO TFTs and their correlation. |
| first_indexed | 2024-12-14T12:07:24Z |
| format | Article |
| id | doaj.art-ee9a77c04f4c420eb05338f2a3a8689a |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T12:07:24Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-ee9a77c04f4c420eb05338f2a3a8689a2022-12-21T23:01:50ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-0171063107110.1109/JEDS.2019.29463838863377A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an IlluminationShuai Li0Mingxiang Wang1https://orcid.org/0000-0002-6087-4979Dongli Zhang2https://orcid.org/0000-0002-0556-5532Huaisheng Wang3https://orcid.org/0000-0002-6099-3230Qi Shan4School of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaDegradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS and NBIS, which begins with a small positive shift of threshold voltage (V<sub>th</sub>), and is followed by a large negative V<sub>th</sub> shift. There is an intrinsic correlation between the degradations of NBS and NBIS. Quantitatively, both stress gate biases (V<sub>G</sub>) and temperature dependencies of ΔV<sub>th</sub> of the two degradations are found to be the same and the recovery processes are also very similar. A unified model of NBS and NBIS is proposed to consistently explain the degradation behaviors of a-IGZO TFTs and their correlation.https://ieeexplore.ieee.org/document/8863377/a-InGaZnOthin-film transistors (TFTs)degradationlight illuminationgate bias stress |
| spellingShingle | Shuai Li Mingxiang Wang Dongli Zhang Huaisheng Wang Qi Shan A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination IEEE Journal of the Electron Devices Society a-InGaZnO thin-film transistors (TFTs) degradation light illumination gate bias stress |
| title | A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination |
| title_full | A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination |
| title_fullStr | A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination |
| title_full_unstemmed | A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination |
| title_short | A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination |
| title_sort | unified degradation model of a ingazno tfts under negative gate bias with or without an illumination |
| topic | a-InGaZnO thin-film transistors (TFTs) degradation light illumination gate bias stress |
| url | https://ieeexplore.ieee.org/document/8863377/ |
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