Length-Dependent Photoelectric Property of ZnO Nanowires
Abstract An interesting phenomenon that the photocurrent (the difference between illumination and dark current) of a ZnO nanowire (NW) under a specified voltage increased as its length increased in a certain range was observed previously and it was supposed to be mainly due to a special mean free pa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2022-08-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | https://doi.org/10.1186/s11671-022-03715-2 |
| _version_ | 1797756538856669184 |
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| author | Ren Ren Xiaomin Ren Hao Liu Yongqing Huang Weifang Yuan |
| author_facet | Ren Ren Xiaomin Ren Hao Liu Yongqing Huang Weifang Yuan |
| author_sort | Ren Ren |
| collection | DOAJ |
| description | Abstract An interesting phenomenon that the photocurrent (the difference between illumination and dark current) of a ZnO nanowire (NW) under a specified voltage increased as its length increased in a certain range was observed previously and it was supposed to be mainly due to a special mean free path effect (MFPE) which caused a special distribution of dark electron density along the length with two higher electron density regions near the two ends of the NW, respectively, and the lower one in the middle part. However, such an explanation would be unreasonable and the true reasons should be the growing-process caused variation of the oxygen adsorption capacity along the NW length and the length-dependent lifetime of photogenerated carriers. Based on this understanding, a theoretical model to properly explain this phenomenon is proposed and the calculation results are in good agreement with the experimental data. This work has introduced an improved insight into the theory of the length-dependent photoelectric property of ZnO NWs. |
| first_indexed | 2024-03-12T18:02:57Z |
| format | Article |
| id | doaj.art-ee9c306e0c614358b3a2c842bf0720cc |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:02:57Z |
| publishDate | 2022-08-01 |
| publisher | SpringerOpen |
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| series | Nanoscale Research Letters |
| spelling | doaj.art-ee9c306e0c614358b3a2c842bf0720cc2023-08-02T09:35:11ZengSpringerOpenNanoscale Research Letters1556-276X2022-08-011711710.1186/s11671-022-03715-2Length-Dependent Photoelectric Property of ZnO NanowiresRen Ren0Xiaomin Ren1Hao Liu2Yongqing Huang3Weifang Yuan4State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and TelecommunicationsAbstract An interesting phenomenon that the photocurrent (the difference between illumination and dark current) of a ZnO nanowire (NW) under a specified voltage increased as its length increased in a certain range was observed previously and it was supposed to be mainly due to a special mean free path effect (MFPE) which caused a special distribution of dark electron density along the length with two higher electron density regions near the two ends of the NW, respectively, and the lower one in the middle part. However, such an explanation would be unreasonable and the true reasons should be the growing-process caused variation of the oxygen adsorption capacity along the NW length and the length-dependent lifetime of photogenerated carriers. Based on this understanding, a theoretical model to properly explain this phenomenon is proposed and the calculation results are in good agreement with the experimental data. This work has introduced an improved insight into the theory of the length-dependent photoelectric property of ZnO NWs.https://doi.org/10.1186/s11671-022-03715-2NanowiresLength-dependentOxygen vacanciesOxygen adsorption capacityLifetime |
| spellingShingle | Ren Ren Xiaomin Ren Hao Liu Yongqing Huang Weifang Yuan Length-Dependent Photoelectric Property of ZnO Nanowires Nanoscale Research Letters Nanowires Length-dependent Oxygen vacancies Oxygen adsorption capacity Lifetime |
| title | Length-Dependent Photoelectric Property of ZnO Nanowires |
| title_full | Length-Dependent Photoelectric Property of ZnO Nanowires |
| title_fullStr | Length-Dependent Photoelectric Property of ZnO Nanowires |
| title_full_unstemmed | Length-Dependent Photoelectric Property of ZnO Nanowires |
| title_short | Length-Dependent Photoelectric Property of ZnO Nanowires |
| title_sort | length dependent photoelectric property of zno nanowires |
| topic | Nanowires Length-dependent Oxygen vacancies Oxygen adsorption capacity Lifetime |
| url | https://doi.org/10.1186/s11671-022-03715-2 |
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