Analysis of the Effect of a Vertical Magnetic Field on Melt Convection and Oxygen Transport During Directional Solidification of Multi-Crystalline Silicon by Numerical Simulation
Melt convection during the directional solidification process of multi-crystalline silicon plays a critical role in the transport of impurities. The utilization of a static magnetic field is an effective way to control the melt convection pattern. Studying the effect of the Lorentz force induced by...
Main Authors: | Botao Song, Yufeng Luo, Senlin Rao, Fayun Zhang, Yun Hu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-12-01
|
Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/10/1/8 |
Similar Items
-
Numerical Analysis of Phosphorus Concentration Distribution in a Silicon Crystal during Directional Solidification Process
by: Satoshi Nakano, et al.
Published: (2020-12-01) -
Effect of Argon Flow on Oxygen and Carbon Coupled Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots
by: Xiaofang Qi, et al.
Published: (2021-04-01) -
Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification
by: Tomoro Ide, et al.
Published: (2018-06-01) -
Dynamics at crystal/melt interface during solidification of multicrystalline silicon
by: Fujiwara Kozo, et al.
Published: (2022-02-01) -
A mathematical model for distribution of calcium in silicon by vacuum directional solidification
by: Zheng D., et al.
Published: (2016-01-01)