The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the g...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0051050 |
| _version_ | 1818595345479761920 |
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| author | Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura |
| author_facet | Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura |
| author_sort | Tatsuya Yasuoka |
| collection | DOAJ |
| description | α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the growth rate, purity, and surface roughness of α-Ga2O3 films. The growth rate increased with the HCl supply. The thickness, surface roughness, and chemical state analyses indicate that three growth modes occurred depending on the Ga supply rate and HCl/Ga supply ratio and the purity was improved by optimizing the HCl/Ga supply ratio and Ga supply rate. |
| first_indexed | 2024-12-16T11:14:32Z |
| format | Article |
| id | doaj.art-eebbd813a2e844bfbdf1252ae279a1b9 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-16T11:14:32Z |
| publishDate | 2021-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-eebbd813a2e844bfbdf1252ae279a1b92022-12-21T22:33:39ZengAIP Publishing LLCAIP Advances2158-32262021-04-01114045123045123-610.1063/5.0051050The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor depositionTatsuya Yasuoka0Li Liu1Tamako Ozaki2Kanta Asako3Yuna Ishikawa4Miyabi Fukue5Giang T. Dang6Toshiyuki Kawaharamura7Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanResearch Institute, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japanα-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the growth rate, purity, and surface roughness of α-Ga2O3 films. The growth rate increased with the HCl supply. The thickness, surface roughness, and chemical state analyses indicate that three growth modes occurred depending on the Ga supply rate and HCl/Ga supply ratio and the purity was improved by optimizing the HCl/Ga supply ratio and Ga supply rate.http://dx.doi.org/10.1063/5.0051050 |
| spellingShingle | Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition AIP Advances |
| title | The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition |
| title_full | The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition |
| title_fullStr | The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition |
| title_full_unstemmed | The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition |
| title_short | The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition |
| title_sort | effect of hcl on the α ga2o3 thin films fabricated by third generation mist chemical vapor deposition |
| url | http://dx.doi.org/10.1063/5.0051050 |
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