The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the g...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0051050 |