Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic

Piezoelectric and dielectric materials have attracted much attention for their functional device applications. Despite its excellent piezoelectric properties, the content of lead in piezoelectric materials should be restricted to prevent future environmental problems. Therefore, reduced lead content...

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Main Authors: Min Young Park, Jae-Hoon Ji, Jung-Hyuk Koh
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/19/9/2115
_version_ 1798039085988708352
author Min Young Park
Jae-Hoon Ji
Jung-Hyuk Koh
author_facet Min Young Park
Jae-Hoon Ji
Jung-Hyuk Koh
author_sort Min Young Park
collection DOAJ
description Piezoelectric and dielectric materials have attracted much attention for their functional device applications. Despite its excellent piezoelectric properties, the content of lead in piezoelectric materials should be restricted to prevent future environmental problems. Therefore, reduced lead content in piezoelectric materials with similar piezoelectric properties is favorable. In our research, piezoelectric materials with decreased lead content will be studied and discussed. Even though the lead content is decreased in Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;PbTiO<sub>3</sub> ceramics, they show piezoelectric properties similar to that of lead zirconate titanate (PZT)-based materials. We believe this high piezoelectric behavior is related to the relaxation behavior of Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;PbTiO<sub>3</sub> (BMT&#8722;PT) ceramics. In this study, 0.62Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;0.38PbTiO<sub>3</sub> ceramics were prepared by the conventional sintering process. These piezoelectric ceramics were sintered at varying temperatures of 975&#8722;1100 &#176;C. Crystallinity and structural properties were analyzed and discussed. X-ray diffraction pattern analysis demonstrated that the optimal sintering temperature was around 1075 &#176;C. A very high Curie temperature of 447 &#176;C was recorded for 0.62BMT&#8722;0.38PT ceramics sintered at 1075 &#176;C. For the first time, we found that the origin of the high Curie temperature, d<sub>33</sub>, and the dielectric constant is the relaxation behavior of different dipoles in 0.62BMT&#8722;0.38PT ceramics.
first_indexed 2024-04-11T21:49:03Z
format Article
id doaj.art-eeea808e1bd44540b45e0da5564c5240
institution Directory Open Access Journal
issn 1424-8220
language English
last_indexed 2024-04-11T21:49:03Z
publishDate 2019-05-01
publisher MDPI AG
record_format Article
series Sensors
spelling doaj.art-eeea808e1bd44540b45e0da5564c52402022-12-22T04:01:19ZengMDPI AGSensors1424-82202019-05-01199211510.3390/s19092115s19092115Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> CeramicMin Young Park0Jae-Hoon Ji1Jung-Hyuk Koh2School of Electrical and Electronics Engineering, Chung-Ang University, Heukseok-Ro 84, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Heukseok-Ro 84, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Heukseok-Ro 84, Seoul 06974, KoreaPiezoelectric and dielectric materials have attracted much attention for their functional device applications. Despite its excellent piezoelectric properties, the content of lead in piezoelectric materials should be restricted to prevent future environmental problems. Therefore, reduced lead content in piezoelectric materials with similar piezoelectric properties is favorable. In our research, piezoelectric materials with decreased lead content will be studied and discussed. Even though the lead content is decreased in Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;PbTiO<sub>3</sub> ceramics, they show piezoelectric properties similar to that of lead zirconate titanate (PZT)-based materials. We believe this high piezoelectric behavior is related to the relaxation behavior of Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;PbTiO<sub>3</sub> (BMT&#8722;PT) ceramics. In this study, 0.62Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub>&#8722;0.38PbTiO<sub>3</sub> ceramics were prepared by the conventional sintering process. These piezoelectric ceramics were sintered at varying temperatures of 975&#8722;1100 &#176;C. Crystallinity and structural properties were analyzed and discussed. X-ray diffraction pattern analysis demonstrated that the optimal sintering temperature was around 1075 &#176;C. A very high Curie temperature of 447 &#176;C was recorded for 0.62BMT&#8722;0.38PT ceramics sintered at 1075 &#176;C. For the first time, we found that the origin of the high Curie temperature, d<sub>33</sub>, and the dielectric constant is the relaxation behavior of different dipoles in 0.62BMT&#8722;0.38PT ceramics.https://www.mdpi.com/1424-8220/19/9/2115piezoelectricBMT–PTceramic
spellingShingle Min Young Park
Jae-Hoon Ji
Jung-Hyuk Koh
Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
Sensors
piezoelectric
BMT–PT
ceramic
title Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
title_full Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
title_fullStr Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
title_full_unstemmed Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
title_short Relaxation-Related Piezoelectric and Dielectric Behavior of Bi(Mg,Ti)O<sub>3</sub>–PbTiO<sub>3</sub> Ceramic
title_sort relaxation related piezoelectric and dielectric behavior of bi mg ti o sub 3 sub pbtio sub 3 sub ceramic
topic piezoelectric
BMT–PT
ceramic
url https://www.mdpi.com/1424-8220/19/9/2115
work_keys_str_mv AT minyoungpark relaxationrelatedpiezoelectricanddielectricbehaviorofbimgtiosub3subpbtiosub3subceramic
AT jaehoonji relaxationrelatedpiezoelectricanddielectricbehaviorofbimgtiosub3subpbtiosub3subceramic
AT junghyukkoh relaxationrelatedpiezoelectricanddielectricbehaviorofbimgtiosub3subpbtiosub3subceramic