On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors
In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microe...
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| Format: | Article |
| Language: | English |
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MDPI AG
2017-08-01
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| Series: | Proceedings |
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| Online Access: | https://www.mdpi.com/2504-3900/1/4/312 |
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| author | Thi Thu Thuy Nguyen Maxime Legallais Fanny Morisot Thibauld Cazimajou Mireille Mouis Bassem Salem Valérie Stambouli Céline Ternon |
| author_facet | Thi Thu Thuy Nguyen Maxime Legallais Fanny Morisot Thibauld Cazimajou Mireille Mouis Bassem Salem Valérie Stambouli Céline Ternon |
| author_sort | Thi Thu Thuy Nguyen |
| collection | DOAJ |
| description | In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microelectronic technology. The SiNN-based transistors exhibit a high initial ON-state current (5.10−8 A) and homogeneous electrical characteristics. For DNA detection, a new and eco-friendly functionalization process based on glycidyloxypropyltrimethoxysilane (GOPS) was performed which enables the covalent grafting of DNA probes on SiNN. This hybridization leads to a significant decrease of ON-state current of device. Additionally, it is observed that SiNN devices reveal reproductive current response to DNA detection. We demonstrate, for the first time, the successful integration of SiNN into sensor for electrical label-free DNA detection at low cost. |
| first_indexed | 2024-04-12T17:24:59Z |
| format | Article |
| id | doaj.art-ef0bcb77238e4f6d816427d120104cd4 |
| institution | Directory Open Access Journal |
| issn | 2504-3900 |
| language | English |
| last_indexed | 2024-04-12T17:24:59Z |
| publishDate | 2017-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Proceedings |
| spelling | doaj.art-ef0bcb77238e4f6d816427d120104cd42022-12-22T03:23:21ZengMDPI AGProceedings2504-39002017-08-011431210.3390/proceedings1040312proceedings1040312On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect TransistorsThi Thu Thuy Nguyen0Maxime Legallais1Fanny Morisot2Thibauld Cazimajou3Mireille Mouis4Bassem Salem5Valérie Stambouli6Céline Ternon7University Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, IMEP-LaHC, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, IMEP-LaHC, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP ‡, LMGP, F-38000 Grenoble, FranceIn this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microelectronic technology. The SiNN-based transistors exhibit a high initial ON-state current (5.10−8 A) and homogeneous electrical characteristics. For DNA detection, a new and eco-friendly functionalization process based on glycidyloxypropyltrimethoxysilane (GOPS) was performed which enables the covalent grafting of DNA probes on SiNN. This hybridization leads to a significant decrease of ON-state current of device. Additionally, it is observed that SiNN devices reveal reproductive current response to DNA detection. We demonstrate, for the first time, the successful integration of SiNN into sensor for electrical label-free DNA detection at low cost.https://www.mdpi.com/2504-3900/1/4/312silicon nanowiresnanonetsfield-effect transistorselectrical characteristicsDNA sensorlabel-free detectionfunctionalizationGOPShybridization |
| spellingShingle | Thi Thu Thuy Nguyen Maxime Legallais Fanny Morisot Thibauld Cazimajou Mireille Mouis Bassem Salem Valérie Stambouli Céline Ternon On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors Proceedings silicon nanowires nanonets field-effect transistors electrical characteristics DNA sensor label-free detection functionalization GOPS hybridization |
| title | On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors |
| title_full | On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors |
| title_fullStr | On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors |
| title_full_unstemmed | On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors |
| title_short | On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors |
| title_sort | on the development of label free dna sensor using silicon nanonet field effect transistors |
| topic | silicon nanowires nanonets field-effect transistors electrical characteristics DNA sensor label-free detection functionalization GOPS hybridization |
| url | https://www.mdpi.com/2504-3900/1/4/312 |
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