On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microe...

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Bibliographic Details
Main Authors: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Mireille Mouis, Bassem Salem, Valérie Stambouli, Céline Ternon
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Proceedings
Subjects:
silicon nanowires
nanonets
field-effect transistors
electrical characteristics
DNA sensor
label-free detection
functionalization
GOPS
hybridization
Online Access:https://www.mdpi.com/2504-3900/1/4/312

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