Summary of the Basic Free Electron Transport Characteristics in Donor Doped Silicon
A present summary is assigned to present the transport characteristics of the free randomly moving (RM) electrons in silicon at any doping level by phosphorous donors. The application of the Fermi-Dirac statistics and stochastic description of the free RM electrons lead to obtaining the general expr...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/11/1666 |