Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors
Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-galli...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/9/1273 |
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| author | Marco Moreira Emanuel Carlos Carlos Dias Jonas Deuermeier Maria Pereira Pedro Barquinha Rita Branquinho Rodrigo Martins Elvira Fortunato |
| author_facet | Marco Moreira Emanuel Carlos Carlos Dias Jonas Deuermeier Maria Pereira Pedro Barquinha Rita Branquinho Rodrigo Martins Elvira Fortunato |
| author_sort | Marco Moreira |
| collection | DOAJ |
| description | Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlO<sub>x</sub>. The devices show saturation mobility of 3.2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, <i>I<sub>On</sub></i>/<i>I<sub>Off</sub></i> of 10<sup>6</sup>, <i>SS</i> of 73 mV dec<sup>−1</sup> and <i>V<sub>On</sub></i> of 0.18 V, thus demonstrating promising features for low-cost circuit applications. |
| first_indexed | 2024-12-23T14:05:09Z |
| format | Article |
| id | doaj.art-ef4a2ff3cfd64601b05eed0903d52c7b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-23T14:05:09Z |
| publishDate | 2019-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ef4a2ff3cfd64601b05eed0903d52c7b2022-12-21T17:44:13ZengMDPI AGNanomaterials2079-49912019-09-0199127310.3390/nano9091273nano9091273Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film TransistorsMarco Moreira0Emanuel Carlos1Carlos Dias2Jonas Deuermeier3Maria Pereira4Pedro Barquinha5Rita Branquinho6Rodrigo Martins7Elvira Fortunato8i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugali3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, PortugalSolution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlO<sub>x</sub>. The devices show saturation mobility of 3.2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, <i>I<sub>On</sub></i>/<i>I<sub>Off</sub></i> of 10<sup>6</sup>, <i>SS</i> of 73 mV dec<sup>−1</sup> and <i>V<sub>On</sub></i> of 0.18 V, thus demonstrating promising features for low-cost circuit applications.https://www.mdpi.com/2079-4991/9/9/1273IGZO compositionsolution combustion synthesistransparent amorphous semiconductor oxideslow voltage operation |
| spellingShingle | Marco Moreira Emanuel Carlos Carlos Dias Jonas Deuermeier Maria Pereira Pedro Barquinha Rita Branquinho Rodrigo Martins Elvira Fortunato Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors Nanomaterials IGZO composition solution combustion synthesis transparent amorphous semiconductor oxides low voltage operation |
| title | Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors |
| title_full | Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors |
| title_fullStr | Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors |
| title_full_unstemmed | Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors |
| title_short | Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors |
| title_sort | tailoring igzo composition for enhanced fully solution based thin film transistors |
| topic | IGZO composition solution combustion synthesis transparent amorphous semiconductor oxides low voltage operation |
| url | https://www.mdpi.com/2079-4991/9/9/1273 |
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