Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure

In this paper, an n–p–n structure based on a β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub>3</sub> junction was fabricated. The device based on the β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub...

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Manylion Llyfryddiaeth
Prif Awdur: Shinji Nakagomi
Fformat: Erthygl
Iaith:English
Cyhoeddwyd: MDPI AG 2023-10-01
Cyfres:Sensors
Pynciau:
Mynediad Ar-lein:https://www.mdpi.com/1424-8220/23/19/8332