Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure
In this paper, an n–p–n structure based on a β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub>3</sub> junction was fabricated. The device based on the β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub...
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| Médium: | Článek |
| Jazyk: | English |
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MDPI AG
2023-10-01
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| Edice: | Sensors |
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| On-line přístup: | https://www.mdpi.com/1424-8220/23/19/8332 |