Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure
In this paper, an n–p–n structure based on a β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub>3</sub> junction was fabricated. The device based on the β-Ga<sub>2</sub>O<sub>3</sub>/NiO/β-Ga<sub>2</sub>O<sub...
| Κύριος συγγραφέας: | |
|---|---|
| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
MDPI AG
2023-10-01
|
| Σειρά: | Sensors |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/1424-8220/23/19/8332 |