New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

This paper presents a novel approach to the efficient extraction of parasitic resistances in high electron mobility transistors (HEMTs). The study reveals that the gate resistance value can be accurately determined under specific forward gate bias conditions (<i>V<sub>g</sub></i...

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Bibliographic Details
Main Authors: Surajit Chakraborty, Walid Amir, Hyuk-Min Kwon, Tae-Woo Kim
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Electronics
Subjects:
gate resistance
parasitic resistance
parasitic capacitance
high electron mobility transistor
depletion layer capacitance
small-signal model
Online Access:https://www.mdpi.com/2079-9292/12/14/3044

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