Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth
Abstract The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (~300 °C), low-cost, facile and efficient operation. The gr...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-01385-0 |
| _version_ | 1818420376835719168 |
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| author | Qiang Li Feng Yun Yufeng Li Wen Ding Ye Zhang |
| author_facet | Qiang Li Feng Yun Yufeng Li Wen Ding Ye Zhang |
| author_sort | Qiang Li |
| collection | DOAJ |
| description | Abstract The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (~300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ~200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ~30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value. |
| first_indexed | 2024-12-14T12:53:29Z |
| format | Article |
| id | doaj.art-efdbccd660284d5bb17883614888b5fd |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T12:53:29Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-efdbccd660284d5bb17883614888b5fd2022-12-21T23:00:37ZengNature PortfolioScientific Reports2045-23222017-05-017111010.1038/s41598-017-01385-0Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growthQiang Li0Feng Yun1Yufeng Li2Wen Ding3Ye Zhang4Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong UniversitySolid-State Lighting Engineering Research Center, Xi’an Jiaotong UniversityAbstract The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (~300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ~200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ~30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.https://doi.org/10.1038/s41598-017-01385-0 |
| spellingShingle | Qiang Li Feng Yun Yufeng Li Wen Ding Ye Zhang Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth Scientific Reports |
| title | Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth |
| title_full | Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth |
| title_fullStr | Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth |
| title_full_unstemmed | Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth |
| title_short | Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth |
| title_sort | fabrication and application of indium tin oxide nanowire networks by polystyrene assisted growth |
| url | https://doi.org/10.1038/s41598-017-01385-0 |
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