Nano-Scale core effects on electronic structure properties of gallium arsenide

Ab – initio density function theory (DFT) calculations coupled with Large Unit Cell (LUC) method were carried out to evaluate the electronic structure properties of III-V zinc blend (GaAs). The nano – scale that have dimension (1.56-2.04)nm. The Gaussian 03 computational packages has been employed...

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Bibliographic Details
Main Author: Mohammed T. Hussein
Format: Article
Language:English
Published: University of Baghdad 2012-05-01
Series:Iraqi Journal of Physics
Subjects:
Online Access:https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/768
Description
Summary:Ab – initio density function theory (DFT) calculations coupled with Large Unit Cell (LUC) method were carried out to evaluate the electronic structure properties of III-V zinc blend (GaAs). The nano – scale that have dimension (1.56-2.04)nm. The Gaussian 03 computational packages has been employed through out this study to compute the electronic properties include lattice constant, energy gap, valence and conduction band width, total energy, cohesive energy and density of state etc. Results show that the total energy and energy gap are decreasing with increase the size of nano crystal . Results revealed that electronic properties converge to some limit as the size of LUC increase .
ISSN:2070-4003
2664-5548