Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H

Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H

The impact of the deposition parameters such as gas flow (sccm) and RF plasma power density (W/cm2) on the deposition rate of a-Si:H films is systematically investigated. A high deposition rate of up to 146 nm/min at 13.56 MHz is achieved for the a-Si:H films deposited with high lateral uniformity o...

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Bibliographic Details
Main Authors: Kumar Avishek, Widenborg Per Ingemar, Dalapati Goutam Kumar, Subramanian Gomathy Sandhya, Aberle Armin Gerhard
Format: Article
Language:English
Published: EDP Sciences 2015-01-01
Series:EPJ Photovoltaics
Online Access:http://dx.doi.org/10.1051/epjpv/2015004

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