Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

We show that pressure applied to twisted WSe_{2} can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret...

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Main Authors: Nicolás Morales-Durán, Jie Wang, Gabriel R. Schleder, Mattia Angeli, Ziyan Zhu, Efthimios Kaxiras, Cécile Repellin, Jennifer Cano
Format: Article
Language:English
Published: American Physical Society 2023-08-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.5.L032022
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author Nicolás Morales-Durán
Jie Wang
Gabriel R. Schleder
Mattia Angeli
Ziyan Zhu
Efthimios Kaxiras
Cécile Repellin
Jennifer Cano
author_facet Nicolás Morales-Durán
Jie Wang
Gabriel R. Schleder
Mattia Angeli
Ziyan Zhu
Efthimios Kaxiras
Cécile Repellin
Jennifer Cano
author_sort Nicolás Morales-Durán
collection DOAJ
description We show that pressure applied to twisted WSe_{2} can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moiré valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.
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spelling doaj.art-f01bf4b20b884203ae75497b9d1ee2d12024-04-12T17:33:18ZengAmerican Physical SocietyPhysical Review Research2643-15642023-08-0153L03202210.1103/PhysRevResearch.5.L032022Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenidesNicolás Morales-DuránJie WangGabriel R. SchlederMattia AngeliZiyan ZhuEfthimios KaxirasCécile RepellinJennifer CanoWe show that pressure applied to twisted WSe_{2} can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moiré valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.http://doi.org/10.1103/PhysRevResearch.5.L032022
spellingShingle Nicolás Morales-Durán
Jie Wang
Gabriel R. Schleder
Mattia Angeli
Ziyan Zhu
Efthimios Kaxiras
Cécile Repellin
Jennifer Cano
Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
Physical Review Research
title Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
title_full Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
title_fullStr Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
title_full_unstemmed Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
title_short Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides
title_sort pressure enhanced fractional chern insulators along a magic line in moire transition metal dichalcogenides
url http://doi.org/10.1103/PhysRevResearch.5.L032022
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