Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm
The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunc...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9573332/ |
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| author | Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_facet | Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_sort | Jia Xu Brian Sia |
| collection | DOAJ |
| description | The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunct to present communication infrastructure at the O/C bands. The above is especially imperative given the current concerns with regards to the upper bandwidth limit of the single-mode fiber. Furthermore, the waveband could facilitate many more applications such as LIDAR and free-space communication. However, water absorption (OH<sup>-</sup>) is high at most of the 2 μm waveband and this will impact the optical insertion loss of applications implemented in the wavelength region. The relative low water absorption region of the waveband falls within 1950 – 2000 nm. As such, the development of a hybrid/heterogeneous III-V/silicon laser source that operates within the region is important for 2 µm silicon photonics. In this work, we demonstrate a III-V/Si hybrid tunable laser operating from 1955 - 1992 nm for the first time. Room temperature continuous wave operation is achieved with a maximum laser output power of 8.1 mW. This wavelength-tunable laser operates specifically within the low water absorption window, indicating good wavelength suitability for applications at the 2 μm waveband. |
| first_indexed | 2024-12-12T21:14:17Z |
| format | Article |
| id | doaj.art-f03ffe0a9c7f4d50ae9453485c92da99 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-12T21:14:17Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-f03ffe0a9c7f4d50ae9453485c92da992022-12-22T00:11:48ZengIEEEIEEE Photonics Journal1943-06552021-01-011361510.1109/JPHOT.2021.31197609573332Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nmJia Xu Brian Sia0https://orcid.org/0000-0003-4494-8293Xiang Li1Wanjun Wang2Zhongliang Qiao3https://orcid.org/0000-0002-3923-4029X. Guo4Jiawei Wang5https://orcid.org/0000-0003-4043-4113Callum G. Littlejohns6https://orcid.org/0000-0002-7101-0447Chongyang Liu7https://orcid.org/0000-0001-8045-2944Graham T. Reed8Kian Siong Ang9Hong Wang10https://orcid.org/0000-0002-2183-6865School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeTemasek Laboratories@NTU(TL@NTU), Nanyang Technological University, Singapore, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeOptoelectronics Research Centre, University of Southampton, Southampton, U.K.Temasek Laboratories@NTU(TL@NTU), Nanyang Technological University, Singapore, SingaporeOptoelectronics Research Centre, University of Southampton, Southampton, U.K.CompoundTek, Singapore, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, SingaporeThe 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunct to present communication infrastructure at the O/C bands. The above is especially imperative given the current concerns with regards to the upper bandwidth limit of the single-mode fiber. Furthermore, the waveband could facilitate many more applications such as LIDAR and free-space communication. However, water absorption (OH<sup>-</sup>) is high at most of the 2 μm waveband and this will impact the optical insertion loss of applications implemented in the wavelength region. The relative low water absorption region of the waveband falls within 1950 – 2000 nm. As such, the development of a hybrid/heterogeneous III-V/silicon laser source that operates within the region is important for 2 µm silicon photonics. In this work, we demonstrate a III-V/Si hybrid tunable laser operating from 1955 - 1992 nm for the first time. Room temperature continuous wave operation is achieved with a maximum laser output power of 8.1 mW. This wavelength-tunable laser operates specifically within the low water absorption window, indicating good wavelength suitability for applications at the 2 μm waveband.https://ieeexplore.ieee.org/document/9573332/2 µm silicon photonicshybrid III-V/silicon lasersintegrated opticstunable lasers |
| spellingShingle | Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm IEEE Photonics Journal 2 µm silicon photonics hybrid III-V/silicon lasers integrated optics tunable lasers |
| title | Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_full | Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_fullStr | Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_full_unstemmed | Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_short | Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_sort | compact hybrid iii v x002f silicon vernier laser diode operating from 1955 x2013 1992 nm |
| topic | 2 µm silicon photonics hybrid III-V/silicon lasers integrated optics tunable lasers |
| url | https://ieeexplore.ieee.org/document/9573332/ |
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