Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate

Mathematical computer models of the permittivity of silicon-based nanostructures upon interaction with electromagnetic radiation in a wide frequency range have been developed. To implement computer models for studying the electrophysical properties of the structures under study, algorithms and a set...

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Main Authors: Sergey Korchagin, Ekaterina Romanova, Petr Nikitin, Denis Serdechnyy, Konstantin V. Bublikov, Irina Bystrenina
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Mathematics
Subjects:
Online Access:https://www.mdpi.com/2227-7390/10/4/596
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author Sergey Korchagin
Ekaterina Romanova
Petr Nikitin
Denis Serdechnyy
Konstantin V. Bublikov
Irina Bystrenina
author_facet Sergey Korchagin
Ekaterina Romanova
Petr Nikitin
Denis Serdechnyy
Konstantin V. Bublikov
Irina Bystrenina
author_sort Sergey Korchagin
collection DOAJ
description Mathematical computer models of the permittivity of silicon-based nanostructures upon interaction with electromagnetic radiation in a wide frequency range have been developed. To implement computer models for studying the electrophysical properties of the structures under study, algorithms and a set of programs have been developed. The results of the study of materials will not only provide fundamental information about the physical effects occurring in composite nanostructures but will also be useful for solving problems related to calculations for given electrophysical problems. For a nanocomposite based on ceramics and semiconductor oxides of zinc grains, resonant bursts of permittivity are observed within a wavelength of 300–400 nm; it has been found that this is due to the presence of electronic polarization of the nanocomposite core. The paper presents the results of modeling the current-voltage characteristics of a nanocomposite based on ceramics and semiconductor grains of zinc oxide. The obtained results show that the geometrical parameters, such as the number of layers and sample width, affect the CVC of the nanocomposite, and the operating point of the CVC shifts. This may be of interest in the development of materials with desired electrical characteristics for the creation of varistors.
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spelling doaj.art-f04175ac06cc492da91870cd268b269d2023-11-23T20:57:13ZengMDPI AGMathematics2227-73902022-02-0110459610.3390/math10040596Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite ConglomerateSergey Korchagin0Ekaterina Romanova1Petr Nikitin2Denis Serdechnyy3Konstantin V. Bublikov4Irina Bystrenina5Department of Data Analysis and Machine Learning, Financial University under the Government of Russian Federation, 4th Veshnyakovsky pr. 4, 111395 Moscow, RussiaDepartment of Data Analysis and Machine Learning, Financial University under the Government of Russian Federation, 4th Veshnyakovsky pr. 4, 111395 Moscow, RussiaDepartment of Data Analysis and Machine Learning, Financial University under the Government of Russian Federation, 4th Veshnyakovsky pr. 4, 111395 Moscow, RussiaDepartment of Innovation Management, State University of Management, Ryazansky pr. 99, 109542 Moscow, RussiaInstitute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 3484/9, 84104 Bratislava, SlovakiaDepartment of Applied Informatics, Russian State Agrarian University, Moscow Timiryazev Agricultural Academy, 49 Timeryazevskaya, 127550 Moscow, RussiaMathematical computer models of the permittivity of silicon-based nanostructures upon interaction with electromagnetic radiation in a wide frequency range have been developed. To implement computer models for studying the electrophysical properties of the structures under study, algorithms and a set of programs have been developed. The results of the study of materials will not only provide fundamental information about the physical effects occurring in composite nanostructures but will also be useful for solving problems related to calculations for given electrophysical problems. For a nanocomposite based on ceramics and semiconductor oxides of zinc grains, resonant bursts of permittivity are observed within a wavelength of 300–400 nm; it has been found that this is due to the presence of electronic polarization of the nanocomposite core. The paper presents the results of modeling the current-voltage characteristics of a nanocomposite based on ceramics and semiconductor grains of zinc oxide. The obtained results show that the geometrical parameters, such as the number of layers and sample width, affect the CVC of the nanocomposite, and the operating point of the CVC shifts. This may be of interest in the development of materials with desired electrical characteristics for the creation of varistors.https://www.mdpi.com/2227-7390/10/4/596mathematical modelingcomputer modelingdielectric constantelectrical conductivitynanostructuressilicon
spellingShingle Sergey Korchagin
Ekaterina Romanova
Petr Nikitin
Denis Serdechnyy
Konstantin V. Bublikov
Irina Bystrenina
Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
Mathematics
mathematical modeling
computer modeling
dielectric constant
electrical conductivity
nanostructures
silicon
title Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
title_full Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
title_fullStr Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
title_full_unstemmed Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
title_short Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate
title_sort mathematical modeling of dielectric permeability and volt ampere characteristics of a semiconductor nanocomposite conglomerate
topic mathematical modeling
computer modeling
dielectric constant
electrical conductivity
nanostructures
silicon
url https://www.mdpi.com/2227-7390/10/4/596
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