LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output
In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the i...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/11/1260 |
| _version_ | 1798038876396191744 |
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| author | Raúl Gracia Sáez Nicolás Medrano Marqués |
| author_facet | Raúl Gracia Sáez Nicolás Medrano Marqués |
| author_sort | Raúl Gracia Sáez |
| collection | DOAJ |
| description | In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design. |
| first_indexed | 2024-04-11T21:46:21Z |
| format | Article |
| id | doaj.art-f06d37a0637f4ea18d347ed61edfe7a3 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T21:46:21Z |
| publishDate | 2019-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-f06d37a0637f4ea18d347ed61edfe7a32022-12-22T04:01:24ZengMDPI AGElectronics2079-92922019-11-01811126010.3390/electronics8111260electronics8111260LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the OutputRaúl Gracia Sáez0Nicolás Medrano Marqués1Research and Development Department, Teltronic S.A.U., Malpica Industrial Area, 50016 Zaragoza, SpainElectronics and Communication Department, University of Zaragoza, Faculty of Physics, 50009 Zaragoza, SpainIn order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design.https://www.mdpi.com/2079-9292/8/11/1260linearizationpower amplifierpredistortionldmosgan |
| spellingShingle | Raúl Gracia Sáez Nicolás Medrano Marqués LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output Electronics linearization power amplifier predistortion ldmos gan |
| title | LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output |
| title_full | LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output |
| title_fullStr | LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output |
| title_full_unstemmed | LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output |
| title_short | LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output |
| title_sort | ldmos versus gan rf power amplifier comparison based on the computing complexity needed to linearize the output |
| topic | linearization power amplifier predistortion ldmos gan |
| url | https://www.mdpi.com/2079-9292/8/11/1260 |
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