Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films
Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture...
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Frontiers Media S.A.
2021-10-01
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.775048/full |
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| author | Haishuang Lu Haishuang Lu Yu Chen Kexin Yang Yawei Kuang Yawei Kuang Zhongguo Li Yushen Liu Yushen Liu |
| author_facet | Haishuang Lu Haishuang Lu Yu Chen Kexin Yang Yawei Kuang Yawei Kuang Zhongguo Li Yushen Liu Yushen Liu |
| author_sort | Haishuang Lu |
| collection | DOAJ |
| description | Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices. |
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| institution | Directory Open Access Journal |
| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-12-18T02:31:06Z |
| publishDate | 2021-10-01 |
| publisher | Frontiers Media S.A. |
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| spelling | doaj.art-f096281c7aa14c00af5479461435cd332022-12-21T21:23:53ZengFrontiers Media S.A.Frontiers in Materials2296-80162021-10-01810.3389/fmats.2021.775048775048Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin FilmsHaishuang Lu0Haishuang Lu1Yu Chen2Kexin Yang3Yawei Kuang4Yawei Kuang5Zhongguo Li6Yushen Liu7Yushen Liu8School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, ChinaSuzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu, ChinaSchool of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, ChinaSchool of Physical Science and Technology, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, ChinaSuzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu, ChinaSchool of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, ChinaSchool of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, ChinaSuzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu, ChinaGallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.https://www.frontiersin.org/articles/10.3389/fmats.2021.775048/fullgallium sulfidemetal monochalcogenideZ-scan techniquetransient absorption spectroscopylayered semiconductor |
| spellingShingle | Haishuang Lu Haishuang Lu Yu Chen Kexin Yang Yawei Kuang Yawei Kuang Zhongguo Li Yushen Liu Yushen Liu Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films Frontiers in Materials gallium sulfide metal monochalcogenide Z-scan technique transient absorption spectroscopy layered semiconductor |
| title | Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films |
| title_full | Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films |
| title_fullStr | Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films |
| title_full_unstemmed | Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films |
| title_short | Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films |
| title_sort | ultrafast nonlinear optical response and carrier dynamics in layered gallium sulfide gas single crystalline thin films |
| topic | gallium sulfide metal monochalcogenide Z-scan technique transient absorption spectroscopy layered semiconductor |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2021.775048/full |
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