Semiconducting behavior of the anodically passive films formed on AZ31B alloy

This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH, as well as the estimation of the passive film thickness as a function of the film formation potential. Mott–Schottky analysis revealed that th...

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Main Authors: A. Fattah-alhosseini, M. Sabaghi Joni
Format: Article
Language:English
Published: KeAi Communications Co., Ltd. 2014-12-01
Series:Journal of Magnesium and Alloys
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2213956714000656
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author A. Fattah-alhosseini
M. Sabaghi Joni
author_facet A. Fattah-alhosseini
M. Sabaghi Joni
author_sort A. Fattah-alhosseini
collection DOAJ
description This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH, as well as the estimation of the passive film thickness as a function of the film formation potential. Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials preponderated. Based on the Mott–Schottky analysis, it was shown that the calculated donor density increases linearly with increasing the formation potential. Also, the electrochemical impedance spectroscopy (EIS) results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential. The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior, due to the growth of a much thicker and less defective films.
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spelling doaj.art-f09e0f70c42642fd8e23e71b410719482024-04-16T21:12:18ZengKeAi Communications Co., Ltd.Journal of Magnesium and Alloys2213-95672014-12-012430530810.1016/j.jma.2014.10.005Semiconducting behavior of the anodically passive films formed on AZ31B alloyA. Fattah-alhosseiniM. Sabaghi JoniThis work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH, as well as the estimation of the passive film thickness as a function of the film formation potential. Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials preponderated. Based on the Mott–Schottky analysis, it was shown that the calculated donor density increases linearly with increasing the formation potential. Also, the electrochemical impedance spectroscopy (EIS) results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential. The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior, due to the growth of a much thicker and less defective films.http://www.sciencedirect.com/science/article/pii/S2213956714000656AZ31B alloyMott–SchottkyFormation potentialDonor density
spellingShingle A. Fattah-alhosseini
M. Sabaghi Joni
Semiconducting behavior of the anodically passive films formed on AZ31B alloy
Journal of Magnesium and Alloys
AZ31B alloy
Mott–Schottky
Formation potential
Donor density
title Semiconducting behavior of the anodically passive films formed on AZ31B alloy
title_full Semiconducting behavior of the anodically passive films formed on AZ31B alloy
title_fullStr Semiconducting behavior of the anodically passive films formed on AZ31B alloy
title_full_unstemmed Semiconducting behavior of the anodically passive films formed on AZ31B alloy
title_short Semiconducting behavior of the anodically passive films formed on AZ31B alloy
title_sort semiconducting behavior of the anodically passive films formed on az31b alloy
topic AZ31B alloy
Mott–Schottky
Formation potential
Donor density
url http://www.sciencedirect.com/science/article/pii/S2213956714000656
work_keys_str_mv AT afattahalhosseini semiconductingbehavioroftheanodicallypassivefilmsformedonaz31balloy
AT msabaghijoni semiconductingbehavioroftheanodicallypassivefilmsformedonaz31balloy