Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping

The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on r...

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Main Authors: Mengyao Li, Yu Zhang, Ting Zhang, Yong Zuo, Ke Xiao, Jordi Arbiol, Jordi Llorca, Yu Liu, Andreu Cabot
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/7/1827
_version_ 1827687187087360000
author Mengyao Li
Yu Zhang
Ting Zhang
Yong Zuo
Ke Xiao
Jordi Arbiol
Jordi Llorca
Yu Liu
Andreu Cabot
author_facet Mengyao Li
Yu Zhang
Ting Zhang
Yong Zuo
Ke Xiao
Jordi Arbiol
Jordi Llorca
Yu Liu
Andreu Cabot
author_sort Mengyao Li
collection DOAJ
description The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi<sub>2</sub>Se<sub>3</sub> is an obvious possible Te-free alternative to Bi<sub>2</sub>Te<sub>3</sub> for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi<sub>2</sub>Se<sub>3</sub> nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi<sub>2</sub>Se<sub>3</sub> Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi<sub>2</sub>Se<sub>3</sub>.
first_indexed 2024-03-10T09:30:01Z
format Article
id doaj.art-f09f864866af474a9f37f41a5f4820c4
institution Directory Open Access Journal
issn 2079-4991
language English
last_indexed 2024-03-10T09:30:01Z
publishDate 2021-07-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj.art-f09f864866af474a9f37f41a5f4820c42023-11-22T04:34:33ZengMDPI AGNanomaterials2079-49912021-07-01117182710.3390/nano11071827Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn DopingMengyao Li0Yu Zhang1Ting Zhang2Yong Zuo3Ke Xiao4Jordi Arbiol5Jordi Llorca6Yu Liu7Andreu Cabot8Catalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, SpainInstitute of Energy Technologies, Department of Chemical Engineering and Barcelona Research Center in Multiscale Science and Engineering, Universitat Politècnica de Catalunya, EEBE, 08019 Barcelona, SpainInstitute of Science and Technology Austria (IST Austria), Am Campus 1, 3400 Klosterneuburg, AustriaCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainThe cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi<sub>2</sub>Se<sub>3</sub> is an obvious possible Te-free alternative to Bi<sub>2</sub>Te<sub>3</sub> for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi<sub>2</sub>Se<sub>3</sub> nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi<sub>2</sub>Se<sub>3</sub> Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi<sub>2</sub>Se<sub>3</sub>.https://www.mdpi.com/2079-4991/11/7/1827thermoelectricBi<sub>2</sub>Se<sub>3</sub>Sn doping
spellingShingle Mengyao Li
Yu Zhang
Ting Zhang
Yong Zuo
Ke Xiao
Jordi Arbiol
Jordi Llorca
Yu Liu
Andreu Cabot
Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
Nanomaterials
thermoelectric
Bi<sub>2</sub>Se<sub>3</sub>
Sn doping
title Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
title_full Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
title_fullStr Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
title_full_unstemmed Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
title_short Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
title_sort enhanced thermoelectric performance of n type bi sub 2 sub se sub 3 sub nanosheets through sn doping
topic thermoelectric
Bi<sub>2</sub>Se<sub>3</sub>
Sn doping
url https://www.mdpi.com/2079-4991/11/7/1827
work_keys_str_mv AT mengyaoli enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT yuzhang enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT tingzhang enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT yongzuo enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT kexiao enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT jordiarbiol enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT jordillorca enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT yuliu enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping
AT andreucabot enhancedthermoelectricperformanceofntypebisub2subsesub3subnanosheetsthroughsndoping