Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping
The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on r...
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MDPI AG
2021-07-01
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author | Mengyao Li Yu Zhang Ting Zhang Yong Zuo Ke Xiao Jordi Arbiol Jordi Llorca Yu Liu Andreu Cabot |
author_facet | Mengyao Li Yu Zhang Ting Zhang Yong Zuo Ke Xiao Jordi Arbiol Jordi Llorca Yu Liu Andreu Cabot |
author_sort | Mengyao Li |
collection | DOAJ |
description | The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi<sub>2</sub>Se<sub>3</sub> is an obvious possible Te-free alternative to Bi<sub>2</sub>Te<sub>3</sub> for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi<sub>2</sub>Se<sub>3</sub> nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi<sub>2</sub>Se<sub>3</sub> Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi<sub>2</sub>Se<sub>3</sub>. |
first_indexed | 2024-03-10T09:30:01Z |
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id | doaj.art-f09f864866af474a9f37f41a5f4820c4 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-10T09:30:01Z |
publishDate | 2021-07-01 |
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spelling | doaj.art-f09f864866af474a9f37f41a5f4820c42023-11-22T04:34:33ZengMDPI AGNanomaterials2079-49912021-07-01117182710.3390/nano11071827Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn DopingMengyao Li0Yu Zhang1Ting Zhang2Yong Zuo3Ke Xiao4Jordi Arbiol5Jordi Llorca6Yu Liu7Andreu Cabot8Catalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, SpainInstitute of Energy Technologies, Department of Chemical Engineering and Barcelona Research Center in Multiscale Science and Engineering, Universitat Politècnica de Catalunya, EEBE, 08019 Barcelona, SpainInstitute of Science and Technology Austria (IST Austria), Am Campus 1, 3400 Klosterneuburg, AustriaCatalonia Energy Research Institute—IREC, Sant Adrià de Besòs, 08930 Barcelona, SpainThe cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi<sub>2</sub>Se<sub>3</sub> is an obvious possible Te-free alternative to Bi<sub>2</sub>Te<sub>3</sub> for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi<sub>2</sub>Se<sub>3</sub> nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi<sub>2</sub>Se<sub>3</sub> Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi<sub>2</sub>Se<sub>3</sub>.https://www.mdpi.com/2079-4991/11/7/1827thermoelectricBi<sub>2</sub>Se<sub>3</sub>Sn doping |
spellingShingle | Mengyao Li Yu Zhang Ting Zhang Yong Zuo Ke Xiao Jordi Arbiol Jordi Llorca Yu Liu Andreu Cabot Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping Nanomaterials thermoelectric Bi<sub>2</sub>Se<sub>3</sub> Sn doping |
title | Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping |
title_full | Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping |
title_fullStr | Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping |
title_full_unstemmed | Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping |
title_short | Enhanced Thermoelectric Performance of n-Type Bi<sub>2</sub>Se<sub>3</sub> Nanosheets through Sn Doping |
title_sort | enhanced thermoelectric performance of n type bi sub 2 sub se sub 3 sub nanosheets through sn doping |
topic | thermoelectric Bi<sub>2</sub>Se<sub>3</sub> Sn doping |
url | https://www.mdpi.com/2079-4991/11/7/1827 |
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