Doping-Less Feedback Field-Effect Transistors
In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/3/316 |
| Summary: | In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of ~10<sup>4</sup> and steep switching characteristics (~1 mV/decade of current) that result from positive feedback phenomena without dopants. |
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| ISSN: | 2072-666X |