Doping-Less Feedback Field-Effect Transistors
In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/3/316 |
| _version_ | 1797240033594310656 |
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| author | Hakin Kim Doohyeok Lim |
| author_facet | Hakin Kim Doohyeok Lim |
| author_sort | Hakin Kim |
| collection | DOAJ |
| description | In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of ~10<sup>4</sup> and steep switching characteristics (~1 mV/decade of current) that result from positive feedback phenomena without dopants. |
| first_indexed | 2024-04-24T18:01:00Z |
| format | Article |
| id | doaj.art-f0a349b75b4041bfa754c2559b683c19 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-24T18:01:00Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-f0a349b75b4041bfa754c2559b683c192024-03-27T13:55:00ZengMDPI AGMicromachines2072-666X2024-02-0115331610.3390/mi15030316Doping-Less Feedback Field-Effect TransistorsHakin Kim0Doohyeok Lim1Department of Nano Electronic Convergence Engineering, Kyonggi University, Suwon 16227, Gyeonggi-do, Republic of KoreaDepartment of Nano Electronic Convergence Engineering, Kyonggi University, Suwon 16227, Gyeonggi-do, Republic of KoreaIn this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of ~10<sup>4</sup> and steep switching characteristics (~1 mV/decade of current) that result from positive feedback phenomena without dopants.https://www.mdpi.com/2072-666X/15/3/316doping-less devicefeedback field-effect transistorcharge plasma |
| spellingShingle | Hakin Kim Doohyeok Lim Doping-Less Feedback Field-Effect Transistors Micromachines doping-less device feedback field-effect transistor charge plasma |
| title | Doping-Less Feedback Field-Effect Transistors |
| title_full | Doping-Less Feedback Field-Effect Transistors |
| title_fullStr | Doping-Less Feedback Field-Effect Transistors |
| title_full_unstemmed | Doping-Less Feedback Field-Effect Transistors |
| title_short | Doping-Less Feedback Field-Effect Transistors |
| title_sort | doping less feedback field effect transistors |
| topic | doping-less device feedback field-effect transistor charge plasma |
| url | https://www.mdpi.com/2072-666X/15/3/316 |
| work_keys_str_mv | AT hakinkim dopinglessfeedbackfieldeffecttransistors AT doohyeoklim dopinglessfeedbackfieldeffecttransistors |