Doping-Less Feedback Field-Effect Transistors

In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well...

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Bibliographic Details
Main Authors: Hakin Kim, Doohyeok Lim
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/15/3/316