Doping-Less Feedback Field-Effect Transistors
In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well...
Main Authors: | Hakin Kim, Doohyeok Lim |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-02-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/15/3/316 |
Similar Items
-
Reconfigurable Feedback Field-Effect Transistors with a Single Gate
by: Yoocheon Lee, et al.
Published: (2023-12-01) -
Understanding of Feedback Field-Effect Transistor and Its Applications
by: Changhoon Lee, et al.
Published: (2020-04-01) -
Analyzing Transfer Characteristics of Disordered Polymer Field-Effect Transistors for Intrinsic Device Parameter Extraction
by: Minho Yoon
Published: (2023-07-01) -
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
by: Juhee Jeon, et al.
Published: (2023-05-01) -
Microwave field-effect transistors- theory, design and applications/
by: Pengelly, Raymond S. (Raymond Sydney), 1948-
Published: (1982)