Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods
Because of the benefits of lower on-state resistance, higher operating voltage, and higher switching frequency, SiC-MOSFET has gradually become an ideal choice for the development of power converters operating in high voltage, temperature, and power density. However, the greater dv/dt and di/dt duri...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-03-01
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| Series: | Energy Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484722025008 |
| _version_ | 1797843882935844864 |
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| author | Zheng Chen Lianghao Li Xin Li Guozhu Chen |
| author_facet | Zheng Chen Lianghao Li Xin Li Guozhu Chen |
| author_sort | Zheng Chen |
| collection | DOAJ |
| description | Because of the benefits of lower on-state resistance, higher operating voltage, and higher switching frequency, SiC-MOSFET has gradually become an ideal choice for the development of power converters operating in high voltage, temperature, and power density. However, the greater dv/dt and di/dt during fast switching transients in the bridge circuit may produce substantial crosstalk problems on the complementary device due to parasitic characteristics of the device itself and its package, and with the lower turn-on threshold voltage and reverse voltage withstand capability, the crosstalk voltage will directly threaten its safe operation. This paper presents the association between the crosstalk voltage and the parameters in driving circuit and device according to the theoretical analysis of the crosstalk mechanism in a half-bridge circuit and based on the analysis, a gate driver circuit using auxiliary low-power Si-MOSFET are proposed to suppress the crosstalk spike without additional negative gate–source voltage or control signal and can be implemented with low cost and less complexity. The operation principle and parameter design of the key components are analyzed later. Finally, the simulation and experiment results show that proposed active clamped gate driver is effective at suppressing crosstalk. |
| first_indexed | 2024-04-09T17:13:17Z |
| format | Article |
| id | doaj.art-f0b307f539644eb7a19538d280ed9ee8 |
| institution | Directory Open Access Journal |
| issn | 2352-4847 |
| language | English |
| last_indexed | 2024-04-09T17:13:17Z |
| publishDate | 2023-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Energy Reports |
| spelling | doaj.art-f0b307f539644eb7a19538d280ed9ee82023-04-20T04:37:12ZengElsevierEnergy Reports2352-48472023-03-019837846Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methodsZheng Chen0Lianghao Li1Xin Li2Guozhu Chen3College of Electrical Engineering, Zhejiang University, Hangzhou, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou, ChinaCorresponding authors.; College of Electrical Engineering, Zhejiang University, Hangzhou, ChinaCorresponding authors.; College of Electrical Engineering, Zhejiang University, Hangzhou, ChinaBecause of the benefits of lower on-state resistance, higher operating voltage, and higher switching frequency, SiC-MOSFET has gradually become an ideal choice for the development of power converters operating in high voltage, temperature, and power density. However, the greater dv/dt and di/dt during fast switching transients in the bridge circuit may produce substantial crosstalk problems on the complementary device due to parasitic characteristics of the device itself and its package, and with the lower turn-on threshold voltage and reverse voltage withstand capability, the crosstalk voltage will directly threaten its safe operation. This paper presents the association between the crosstalk voltage and the parameters in driving circuit and device according to the theoretical analysis of the crosstalk mechanism in a half-bridge circuit and based on the analysis, a gate driver circuit using auxiliary low-power Si-MOSFET are proposed to suppress the crosstalk spike without additional negative gate–source voltage or control signal and can be implemented with low cost and less complexity. The operation principle and parameter design of the key components are analyzed later. Finally, the simulation and experiment results show that proposed active clamped gate driver is effective at suppressing crosstalk.http://www.sciencedirect.com/science/article/pii/S2352484722025008SiC-MOSFETGate driverAuxiliary circuitActive-clampedCrosstalk suppression |
| spellingShingle | Zheng Chen Lianghao Li Xin Li Guozhu Chen Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods Energy Reports SiC-MOSFET Gate driver Auxiliary circuit Active-clamped Crosstalk suppression |
| title | Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods |
| title_full | Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods |
| title_fullStr | Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods |
| title_full_unstemmed | Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods |
| title_short | Analysis for crosstalk of SiC-MOSFET in a bridge circuit and its active-clamped driver based suppression methods |
| title_sort | analysis for crosstalk of sic mosfet in a bridge circuit and its active clamped driver based suppression methods |
| topic | SiC-MOSFET Gate driver Auxiliary circuit Active-clamped Crosstalk suppression |
| url | http://www.sciencedirect.com/science/article/pii/S2352484722025008 |
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