Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) in...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-01605-7 |
| _version_ | 1818428861545709568 |
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| author | Goutam Kumar Dalapati Siarhei Zhuk Saeid Masudy-Panah Ajay Kushwaha Hwee Leng Seng Vijila Chellappan Vignesh Suresh Zhenghua Su Sudip Kumar Batabyal Cheng Cheh Tan Asim Guchhait Lydia Helena Wong Terence Kin Shun Wong Sudhiranjan Tripathy |
| author_facet | Goutam Kumar Dalapati Siarhei Zhuk Saeid Masudy-Panah Ajay Kushwaha Hwee Leng Seng Vijila Chellappan Vignesh Suresh Zhenghua Su Sudip Kumar Batabyal Cheng Cheh Tan Asim Guchhait Lydia Helena Wong Terence Kin Shun Wong Sudhiranjan Tripathy |
| author_sort | Goutam Kumar Dalapati |
| collection | DOAJ |
| description | Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device. |
| first_indexed | 2024-12-14T15:08:21Z |
| format | Article |
| id | doaj.art-f0b72e26734e48f88ba1e19bdcf9fb7e |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T15:08:21Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-f0b72e26734e48f88ba1e19bdcf9fb7e2022-12-21T22:56:38ZengNature PortfolioScientific Reports2045-23222017-05-017111210.1038/s41598-017-01605-7Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cellsGoutam Kumar Dalapati0Siarhei Zhuk1Saeid Masudy-Panah2Ajay Kushwaha3Hwee Leng Seng4Vijila Chellappan5Vignesh Suresh6Zhenghua Su7Sudip Kumar Batabyal8Cheng Cheh Tan9Asim Guchhait10Lydia Helena Wong11Terence Kin Shun Wong12Sudhiranjan Tripathy13Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Department of Metallurgy Engineering and Materials Science, Indian Institute of Technology IndoreInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Energy Research Institute @ NTU, Nanyang Technological UniversityAmrita Centre for Industrial Research and Innovation (ACIRI), Amrita School of engineering, Coimbatore, Amrita UniversityInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Energy Research Institute @ NTU, Nanyang Technological UniversityEnergy Research Institute @ NTU, Nanyang Technological UniversityNOVITAS, School of Electrical and Electronic Engineering, Block S2, Nanyang Technological UniversityInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.https://doi.org/10.1038/s41598-017-01605-7 |
| spellingShingle | Goutam Kumar Dalapati Siarhei Zhuk Saeid Masudy-Panah Ajay Kushwaha Hwee Leng Seng Vijila Chellappan Vignesh Suresh Zhenghua Su Sudip Kumar Batabyal Cheng Cheh Tan Asim Guchhait Lydia Helena Wong Terence Kin Shun Wong Sudhiranjan Tripathy Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells Scientific Reports |
| title | Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells |
| title_full | Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells |
| title_fullStr | Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells |
| title_full_unstemmed | Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells |
| title_short | Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells |
| title_sort | impact of molybdenum out diffusion and interface quality on the performance of sputter grown czts based solar cells |
| url | https://doi.org/10.1038/s41598-017-01605-7 |
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