Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength. The sensor employs a loop-terminated Mach–Zehnder interferometer (LT-MZI) with a slot waveguide and a strip...

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Main Authors: Raghi S. El Shamy, Mohamed A. Swillam, Mohamed M. ElRayany, Alaa Sultan, Xun Li
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Photonics
Subjects:
Online Access:https://www.mdpi.com/2304-6732/9/1/8
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author Raghi S. El Shamy
Mohamed A. Swillam
Mohamed M. ElRayany
Alaa Sultan
Xun Li
author_facet Raghi S. El Shamy
Mohamed A. Swillam
Mohamed M. ElRayany
Alaa Sultan
Xun Li
author_sort Raghi S. El Shamy
collection DOAJ
description In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength. The sensor employs a loop-terminated Mach–Zehnder interferometer (LT-MZI) with a slot waveguide and a strip waveguide for the sensing arm and the reference arm, respectively. For the same arm length, the LT-MZI can achieve a detection limit two times lower than that of the conventional MZI. Different sensor components were designed, and the optimum dimensions were obtained using finite-difference eigenmode (FDE) and finite-difference time-domain (FDTD) solvers. With a sensing arm length of only 150 μm, our sensor achieves a device sensitivity of 1070 nm/RIU and a figure-of-merit (FOM) as high as 280.8 RIU<sup>−1</sup> at the 1.55 μm wavelength. Higher values of FOM can be attained by employing a longer sensing arm. The whole sensor is subjected to air cladding; thus, there is no need for oxide deposition and a further lithography step for sensing-area patterning. The sensor is well suited for low-cost fabrication and large-scale production. Finally, the same LT-MZI device with strip and slot arms but with oxide cladding was fabricated and characterized. The measurements were in good agreement with the electromagnetic (EM) simulation results, ensuring the reliability of our proposed design.
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spelling doaj.art-f0c5cb5130414bf4a368b23ff385a63d2023-11-23T15:05:56ZengMDPI AGPhotonics2304-67322021-12-0191810.3390/photonics9010008Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder InterferometerRaghi S. El Shamy0Mohamed A. Swillam1Mohamed M. ElRayany2Alaa Sultan3Xun Li4Department of Physics, School of Science and Engineering, The American University in Cairo, New Cairo 11835, EgyptDepartment of Physics, School of Science and Engineering, The American University in Cairo, New Cairo 11835, EgyptDepartment of Physics, School of Science and Engineering, The American University in Cairo, New Cairo 11835, EgyptDepartment of Physics, School of Science and Engineering, The American University in Cairo, New Cairo 11835, EgyptDepartment of Electrical and Computer Engineering, Faculty of Engineering, McMaster University, Hamilton, ON L8S 4L8, CanadaIn this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength. The sensor employs a loop-terminated Mach–Zehnder interferometer (LT-MZI) with a slot waveguide and a strip waveguide for the sensing arm and the reference arm, respectively. For the same arm length, the LT-MZI can achieve a detection limit two times lower than that of the conventional MZI. Different sensor components were designed, and the optimum dimensions were obtained using finite-difference eigenmode (FDE) and finite-difference time-domain (FDTD) solvers. With a sensing arm length of only 150 μm, our sensor achieves a device sensitivity of 1070 nm/RIU and a figure-of-merit (FOM) as high as 280.8 RIU<sup>−1</sup> at the 1.55 μm wavelength. Higher values of FOM can be attained by employing a longer sensing arm. The whole sensor is subjected to air cladding; thus, there is no need for oxide deposition and a further lithography step for sensing-area patterning. The sensor is well suited for low-cost fabrication and large-scale production. Finally, the same LT-MZI device with strip and slot arms but with oxide cladding was fabricated and characterized. The measurements were in good agreement with the electromagnetic (EM) simulation results, ensuring the reliability of our proposed design.https://www.mdpi.com/2304-6732/9/1/8gas sensingsilicon-on-insulatorMach-Zehnder interferometer
spellingShingle Raghi S. El Shamy
Mohamed A. Swillam
Mohamed M. ElRayany
Alaa Sultan
Xun Li
Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
Photonics
gas sensing
silicon-on-insulator
Mach-Zehnder interferometer
title Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
title_full Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
title_fullStr Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
title_full_unstemmed Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
title_short Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer
title_sort compact gas sensor using silicon on insulator loop terminated mach zehnder interferometer
topic gas sensing
silicon-on-insulator
Mach-Zehnder interferometer
url https://www.mdpi.com/2304-6732/9/1/8
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AT mohamedmelrayany compactgassensorusingsilicononinsulatorloopterminatedmachzehnderinterferometer
AT alaasultan compactgassensorusingsilicononinsulatorloopterminatedmachzehnderinterferometer
AT xunli compactgassensorusingsilicononinsulatorloopterminatedmachzehnderinterferometer