Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector
Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by perform...
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MDPI AG
2023-03-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/7/2637 |
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| author | Abdelhady Ellakany Abdelhalim Zekry Mohamed Abouelatta Ahmed Shaker Gihan T. Sayah Mohamed M. El-Banna |
| author_facet | Abdelhady Ellakany Abdelhalim Zekry Mohamed Abouelatta Ahmed Shaker Gihan T. Sayah Mohamed M. El-Banna |
| author_sort | Abdelhady Ellakany |
| collection | DOAJ |
| description | Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by performing TCAD simulations. The model is based on solving the basic semiconductor equations for bipolar transistors and considering the effects of charge distribution on the bulk and on the surface. The developed model also takes into consideration the impact of surface traps, which are induced by photogenerated carriers situated at the surface of the nanowire. Further, photogating phenomena and photodoping are also included. Moreover, displacement damage (DD) is also investigated; an issue arises when the detector is exposed to repeated doses. The presented analytical model can predict the current produced from the incident X-ray beam at various energies. The calculation of the gain of the presented nanowire carefully considers the different governing effects at several values of energies as well as biasing voltage and doping. The proposed model is built in MATLAB, and the validity check of the model results is achieved using SILVACO TCAD device simulation. Comparisons between the proposed model results and SILVACO TCAD device simulation are provided and show good agreement. |
| first_indexed | 2024-03-11T05:32:20Z |
| format | Article |
| id | doaj.art-f0c73a241bfb408a8b6d86347a27a362 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T05:32:20Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-f0c73a241bfb408a8b6d86347a27a3622023-11-17T17:02:54ZengMDPI AGMaterials1996-19442023-03-01167263710.3390/ma16072637Analytical and Numerical Investigation of Nanowire Transistor X-ray DetectorAbdelhady Ellakany0Abdelhalim Zekry1Mohamed Abouelatta2Ahmed Shaker3Gihan T. Sayah4Mohamed M. El-Banna5Electronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, EgyptElectronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, EgyptElectronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, EgyptEngineering Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo 11517, EgyptElectronic Engineering Department, Nuclear Material Authority, Cairo 11381, EgyptEngineering Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo 11517, EgyptRecently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by performing TCAD simulations. The model is based on solving the basic semiconductor equations for bipolar transistors and considering the effects of charge distribution on the bulk and on the surface. The developed model also takes into consideration the impact of surface traps, which are induced by photogenerated carriers situated at the surface of the nanowire. Further, photogating phenomena and photodoping are also included. Moreover, displacement damage (DD) is also investigated; an issue arises when the detector is exposed to repeated doses. The presented analytical model can predict the current produced from the incident X-ray beam at various energies. The calculation of the gain of the presented nanowire carefully considers the different governing effects at several values of energies as well as biasing voltage and doping. The proposed model is built in MATLAB, and the validity check of the model results is achieved using SILVACO TCAD device simulation. Comparisons between the proposed model results and SILVACO TCAD device simulation are provided and show good agreement.https://www.mdpi.com/1996-1944/16/7/2637nanowire detectorshard X-rayInPphototransistormodeling |
| spellingShingle | Abdelhady Ellakany Abdelhalim Zekry Mohamed Abouelatta Ahmed Shaker Gihan T. Sayah Mohamed M. El-Banna Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector Materials nanowire detectors hard X-ray InP phototransistor modeling |
| title | Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector |
| title_full | Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector |
| title_fullStr | Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector |
| title_full_unstemmed | Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector |
| title_short | Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector |
| title_sort | analytical and numerical investigation of nanowire transistor x ray detector |
| topic | nanowire detectors hard X-ray InP phototransistor modeling |
| url | https://www.mdpi.com/1996-1944/16/7/2637 |
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