Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector

Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector

Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by perform...

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Bibliographic Details
Main Authors: Abdelhady Ellakany, Abdelhalim Zekry, Mohamed Abouelatta, Ahmed Shaker, Gihan T. Sayah, Mohamed M. El-Banna
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Materials
Subjects:
nanowire detectors
hard X-ray
InP
phototransistor
modeling
Online Access:https://www.mdpi.com/1996-1944/16/7/2637

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