The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate

The influence of structural defects in spark plasma sintered BaSn _1-x Sb _x O _3 (BSSO, x = 0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4 K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily ox...

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Main Authors: Jelena Vukašinović, Željko Rapljenović, Milica Počuča-Nešić, Tomislav Ivek, Zorica Branković, Goran Branković
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/acb3b0
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author Jelena Vukašinović
Željko Rapljenović
Milica Počuča-Nešić
Tomislav Ivek
Zorica Branković
Goran Branković
author_facet Jelena Vukašinović
Željko Rapljenović
Milica Počuča-Nešić
Tomislav Ivek
Zorica Branković
Goran Branković
author_sort Jelena Vukašinović
collection DOAJ
description The influence of structural defects in spark plasma sintered BaSn _1-x Sb _x O _3 (BSSO, x = 0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4 K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (V _O ) and mixed oxidation states of tin (Sn ^2+ /Sn ^4+ ) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperature-dependent resistivity. The electrical resistivity of the doped samples was two orders of magnitude lower than that of the undoped sample. The presence of structural defects such as V _O , mixed oxidation states of the constituent elements, and significant amounts of O ^− species make the electrical resistivity of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped semiconductor behavior.
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spelling doaj.art-f11296efffde4ed5a0c782d5b62dc2792023-08-09T16:06:04ZengIOP PublishingMaterials Research Express2053-15912023-01-0110101590110.1088/2053-1591/acb3b0The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannateJelena Vukašinović0https://orcid.org/0000-0002-7372-4064Željko Rapljenović1https://orcid.org/0000-0002-8237-5548Milica Počuča-Nešić2Tomislav Ivek3Zorica Branković4Goran Branković5University of Belgrade , Institute for Multidisciplinary Research, Kneza Višeslava 1a, 11030, Belgrade, Serbia; University of Belgrade , Center of Excellence for Green Technologies, Institute for Multidisciplinary Research, , Kneza Višeslava 1a, 11030 Belgrade, SerbiaInstitute of Physics , Bijenička cesta 46, HR-10000, Zagreb, CroatiaUniversity of Belgrade , Institute for Multidisciplinary Research, Kneza Višeslava 1a, 11030, Belgrade, Serbia; University of Belgrade , Center of Excellence for Green Technologies, Institute for Multidisciplinary Research, , Kneza Višeslava 1a, 11030 Belgrade, SerbiaInstitute of Physics , Bijenička cesta 46, HR-10000, Zagreb, CroatiaUniversity of Belgrade , Institute for Multidisciplinary Research, Kneza Višeslava 1a, 11030, Belgrade, Serbia; University of Belgrade , Center of Excellence for Green Technologies, Institute for Multidisciplinary Research, , Kneza Višeslava 1a, 11030 Belgrade, SerbiaUniversity of Belgrade , Institute for Multidisciplinary Research, Kneza Višeslava 1a, 11030, Belgrade, Serbia; University of Belgrade , Center of Excellence for Green Technologies, Institute for Multidisciplinary Research, , Kneza Višeslava 1a, 11030 Belgrade, SerbiaThe influence of structural defects in spark plasma sintered BaSn _1-x Sb _x O _3 (BSSO, x = 0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4 K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (V _O ) and mixed oxidation states of tin (Sn ^2+ /Sn ^4+ ) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperature-dependent resistivity. The electrical resistivity of the doped samples was two orders of magnitude lower than that of the undoped sample. The presence of structural defects such as V _O , mixed oxidation states of the constituent elements, and significant amounts of O ^− species make the electrical resistivity of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped semiconductor behavior.https://doi.org/10.1088/2053-1591/acb3b0barium stannatespark plasma sinteringpoint defectselectrical resistivityx-ray photoelectron spectroscopy
spellingShingle Jelena Vukašinović
Željko Rapljenović
Milica Počuča-Nešić
Tomislav Ivek
Zorica Branković
Goran Branković
The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
Materials Research Express
barium stannate
spark plasma sintering
point defects
electrical resistivity
x-ray photoelectron spectroscopy
title The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
title_full The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
title_fullStr The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
title_full_unstemmed The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
title_short The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
title_sort crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
topic barium stannate
spark plasma sintering
point defects
electrical resistivity
x-ray photoelectron spectroscopy
url https://doi.org/10.1088/2053-1591/acb3b0
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