Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based o...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-10-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202101106 |
| _version_ | 1818835255305437184 |
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| author | Yuan Qin Li‐Heng Li Zhaoan Yu Feihong Wu Danian Dong Wei Guo Zhongfang Zhang Jun‐Hui Yuan Kan‐Hao Xue Xiangshui Miao Shibing Long |
| author_facet | Yuan Qin Li‐Heng Li Zhaoan Yu Feihong Wu Danian Dong Wei Guo Zhongfang Zhang Jun‐Hui Yuan Kan‐Hao Xue Xiangshui Miao Shibing Long |
| author_sort | Yuan Qin |
| collection | DOAJ |
| description | Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision. |
| first_indexed | 2024-12-19T02:47:48Z |
| format | Article |
| id | doaj.art-f1204b88532c40e8a0f6c25cf1918c31 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-19T02:47:48Z |
| publishDate | 2021-10-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-f1204b88532c40e8a0f6c25cf1918c312022-12-21T20:38:47ZengWileyAdvanced Science2198-38442021-10-01820n/an/a10.1002/advs.202101106Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind ImagingYuan Qin0Li‐Heng Li1Zhaoan Yu2Feihong Wu3Danian Dong4Wei Guo5Zhongfang Zhang6Jun‐Hui Yuan7Kan‐Hao Xue8Xiangshui Miao9Shibing Long10Key Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 ChinaWuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 ChinaKey Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 ChinaSchool of Microelectronics University of Science and Technology of China Hefei Anhui 230026 ChinaKey Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 ChinaSchool of Microelectronics University of Science and Technology of China Hefei Anhui 230026 ChinaSchool of Microelectronics University of Science and Technology of China Hefei Anhui 230026 ChinaWuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 ChinaWuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 ChinaWuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 ChinaSchool of Microelectronics University of Science and Technology of China Hefei Anhui 230026 ChinaAbstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision.https://doi.org/10.1002/advs.202101106Ga2O3high detectivityimage sensorsphotodetector arrayssolar‐blind imaginguniformity |
| spellingShingle | Yuan Qin Li‐Heng Li Zhaoan Yu Feihong Wu Danian Dong Wei Guo Zhongfang Zhang Jun‐Hui Yuan Kan‐Hao Xue Xiangshui Miao Shibing Long Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging Advanced Science Ga2O3 high detectivity image sensors photodetector arrays solar‐blind imaging uniformity |
| title | Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging |
| title_full | Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging |
| title_fullStr | Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging |
| title_full_unstemmed | Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging |
| title_short | Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging |
| title_sort | ultra high performance amorphous ga2o3 photodetector arrays for solar blind imaging |
| topic | Ga2O3 high detectivity image sensors photodetector arrays solar‐blind imaging uniformity |
| url | https://doi.org/10.1002/advs.202101106 |
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