A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature
In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) wav...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/10/1458 |
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| author | Merfat H. Raddadi Kh. Lotfy E. S. Elidy A. El-Bary Ramdan. S. Tantawi |
| author_facet | Merfat H. Raddadi Kh. Lotfy E. S. Elidy A. El-Bary Ramdan. S. Tantawi |
| author_sort | Merfat H. Raddadi |
| collection | DOAJ |
| description | In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically. |
| first_indexed | 2024-03-09T20:24:47Z |
| format | Article |
| id | doaj.art-f139b4b38db641a7933fc390a08ad832 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T20:24:47Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-f139b4b38db641a7933fc390a08ad8322023-11-23T23:38:48ZengMDPI AGCrystals2073-43522022-10-011210145810.3390/cryst12101458A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two TemperatureMerfat H. Raddadi0Kh. Lotfy1E. S. Elidy2A. El-Bary3Ramdan. S. Tantawi4Department of Mathematics, College of Science, Taibah University, P.O. Box 344, Madinah 30002, Saudi ArabiaDepartment of Mathematics, College of Science, Taibah University, P.O. Box 344, Madinah 30002, Saudi ArabiaDepartment of Mathematics, Faculty of Science, Zagazig University, Zagazig P.O. Box 44519, EgyptArab Academy for Science, Technology and Maritime Transport, Alexandria P.O. Box 1029, EgyptDepartment of Mathematics, Faculty of Science, Zagazig University, Zagazig P.O. Box 44519, EgyptIn this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically.https://www.mdpi.com/2073-4352/12/10/1458electrons and holeshyperbolic two-temperatureelasto-thermodiffusionLaplace transformsemiconductors |
| spellingShingle | Merfat H. Raddadi Kh. Lotfy E. S. Elidy A. El-Bary Ramdan. S. Tantawi A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature Crystals electrons and holes hyperbolic two-temperature elasto-thermodiffusion Laplace transform semiconductors |
| title | A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature |
| title_full | A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature |
| title_fullStr | A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature |
| title_full_unstemmed | A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature |
| title_short | A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature |
| title_sort | novel photo elasto thermodiffusion waves with electron holes in semiconductor materials with hyperbolic two temperature |
| topic | electrons and holes hyperbolic two-temperature elasto-thermodiffusion Laplace transform semiconductors |
| url | https://www.mdpi.com/2073-4352/12/10/1458 |
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