Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions
Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused...
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| Format: | Article |
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MDPI AG
2018-02-01
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| Series: | Computation |
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| Online Access: | http://www.mdpi.com/2079-3197/6/1/19 |
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| author | Xinghao Liang Yang Li Qiang Zhao Zheng Zhang Xiaoping Ouyang |
| author_facet | Xinghao Liang Yang Li Qiang Zhao Zheng Zhang Xiaoping Ouyang |
| author_sort | Xinghao Liang |
| collection | DOAJ |
| description | Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors. |
| first_indexed | 2024-12-19T21:50:40Z |
| format | Article |
| id | doaj.art-f145c9890c314ec5bc3975a65e948760 |
| institution | Directory Open Access Journal |
| issn | 2079-3197 |
| language | English |
| last_indexed | 2024-12-19T21:50:40Z |
| publishDate | 2018-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Computation |
| spelling | doaj.art-f145c9890c314ec5bc3975a65e9487602022-12-21T20:04:25ZengMDPI AGComputation2079-31972018-02-01611910.3390/computation6010019computation6010019Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium IonsXinghao Liang0Yang Li1Qiang Zhao2Zheng Zhang3Xiaoping Ouyang4Beijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, ChinaSilicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.http://www.mdpi.com/2079-3197/6/1/19plasma-facing materialsilicon carbidesputteringmolecular dynamics simulation |
| spellingShingle | Xinghao Liang Yang Li Qiang Zhao Zheng Zhang Xiaoping Ouyang Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions Computation plasma-facing material silicon carbide sputtering molecular dynamics simulation |
| title | Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions |
| title_full | Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions |
| title_fullStr | Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions |
| title_full_unstemmed | Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions |
| title_short | Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions |
| title_sort | effect of carbon concentration on the sputtering of carbon rich sic bombarded by helium ions |
| topic | plasma-facing material silicon carbide sputtering molecular dynamics simulation |
| url | http://www.mdpi.com/2079-3197/6/1/19 |
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