Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering
This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD anal...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
CTU Central Library
2013-01-01
|
| Series: | Acta Polytechnica |
| Subjects: | |
| Online Access: | https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743 |
| _version_ | 1819152201546727424 |
|---|---|
| author | Dmitriy A. Golosov Sergey M. Zavatskiy Sergey N. Melnikov |
| author_facet | Dmitriy A. Golosov Sergey M. Zavatskiy Sergey N. Melnikov |
| author_sort | Dmitriy A. Golosov |
| collection | DOAJ |
| description | This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10<sup>-2</sup> S/cm under 800 °C. |
| first_indexed | 2024-12-22T14:45:32Z |
| format | Article |
| id | doaj.art-f174a03e163941f6a7d0f22d18bf42c2 |
| institution | Directory Open Access Journal |
| issn | 1210-2709 1805-2363 |
| language | English |
| last_indexed | 2024-12-22T14:45:32Z |
| publishDate | 2013-01-01 |
| publisher | CTU Central Library |
| record_format | Article |
| series | Acta Polytechnica |
| spelling | doaj.art-f174a03e163941f6a7d0f22d18bf42c22022-12-21T18:22:28ZengCTU Central LibraryActa Polytechnica1210-27091805-23632013-01-015321743Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron SputteringDmitriy A. GolosovSergey M. ZavatskiySergey N. MelnikovThis paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10<sup>-2</sup> S/cm under 800 °C.https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743yttria-stabilized zirconiaRF sputteringX-ray diffractiondielectric constantloss tangentcapacity-voltage characteristicionic conductivity. |
| spellingShingle | Dmitriy A. Golosov Sergey M. Zavatskiy Sergey N. Melnikov Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering Acta Polytechnica yttria-stabilized zirconia RF sputtering X-ray diffraction dielectric constant loss tangent capacity-voltage characteristic ionic conductivity. |
| title | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering |
| title_full | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering |
| title_fullStr | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering |
| title_full_unstemmed | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering |
| title_short | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering |
| title_sort | physical and electrical properties of yttria stabilized zirconia thin films prepared by radio frequency magnetron sputtering |
| topic | yttria-stabilized zirconia RF sputtering X-ray diffraction dielectric constant loss tangent capacity-voltage characteristic ionic conductivity. |
| url | https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743 |
| work_keys_str_mv | AT dmitriyagolosov physicalandelectricalpropertiesofyttriastabilizedzirconiathinfilmspreparedbyradiofrequencymagnetronsputtering AT sergeymzavatskiy physicalandelectricalpropertiesofyttriastabilizedzirconiathinfilmspreparedbyradiofrequencymagnetronsputtering AT sergeynmelnikov physicalandelectricalpropertiesofyttriastabilizedzirconiathinfilmspreparedbyradiofrequencymagnetronsputtering |