Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering

Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering

This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD anal...

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Detalhes bibliográficos
Principais autores: Dmitriy A. Golosov, Sergey M. Zavatskiy, Sergey N. Melnikov
Formato: Artigo
Idioma:English
Publicado em: CTU Central Library 2013-01-01
coleção:Acta Polytechnica
Assuntos:
yttria-stabilized zirconia
RF sputtering
X-ray diffraction
dielectric constant
loss tangent
capacity-voltage characteristic
ionic conductivity.
Acesso em linha:https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743

Internet

https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743

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